The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

doi:10.1088/1674-1056/19/5/057205

Abstract This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying the injection of SiH$_{4}$ gas to the reactor before plasma ignition. By comparing with standard discharge condition, delayed SiH$_{4}$ gas condition could prevent the back diffusion of SiH$_{4}$ from the reactor to the deposition region effectively, which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate. Applying this method, it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication. Finally, results are explained by modifying zero-order analytical model, and a good agreement is found between model and experiments concerning the optimum delayed injection time.

Keywords: back diffusion microcrystalline silicon thin film Raman crystallinity

Received: 13 December 2008
Revised: 03 November 2009
Accepted manuscript online:

PACS:	78.30.Am	(Elemental semiconductors and insulators)
	84.60.Jt	(Photoelectric conversion)
	52.77.Dq	(Plasma-based ion implantation and deposition)
	66.30.H-	(Self-diffusion and ionic conduction in nonmetals)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.-a	(Thin film structure and morphology)

Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No.~2006CB202601).

Cite this article:

Chen Yong-Sheng(陈永生), Yang Shi-E(杨仕娥), Wang Jian-Hua(汪建华), Lu Jing-Xiao(卢景霄),Gao Xiao-Yong(郜小勇), and Gu Jin-Hua(谷锦华) The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells 2010 Chin. Phys. B 19 057205

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The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

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