An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

doi:10.1088/1674-1056/19/4/047306

Abstract This paper studies an oxide/silicon core/shell nanowire MOSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher $I_{\rm on}$/$I_{\rm off}$ ratio after introducing the oxide core into a traditional nanowire MOSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

Keywords: core/shell nanowire nanowire MOSFET

Received: 05 July 2009
Revised: 02 August 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.35.-p	(Nanoelectronic devices)

Fund: Project supported by National Natural Science Foundation of China (Grant No.~60876027) and Research Fund for the Doctoral Program of Higher Education of China (Grant No.~200800010054).

Cite this article:

Zhang Li-Ning(张立宁), He Jin(何进), Zhou Wang(周旺), Chen Lin(陈林), and Xu Yi-Wen(徐艺文) An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor 2010 Chin. Phys. B 19 047306

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An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

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