Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

doi:10.1088/1674-1056/19/4/047201

Abstract This paper investigates the behaviours of 4H--SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.

Keywords: 4H--SiC merged PiN Schottky rectifier junction termination extension breakdown thermal behaviour

Received: 17 June 2009
Revised: 24 July 2009
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	84.70.+p	(High-current and high-voltage technology: power systems; power transmission lines and cables)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)
	61.72.S-	(Impurities in crystals)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by Shaanxi 13115 Innovation Engineering Foundation (Grant No.~2008ZDKG-30) and Pre-research Project (Grant No.~51308040302).

Cite this article:

Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension 2010 Chin. Phys. B 19 047201

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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

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