Time delay in InGaN multiple quantum well laser diodes at room temperature

doi:10.1088/1674-1056/19/12/124211

Abstract This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increases further. Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.

Keywords: InGaN laser diode delay effect saturable absorber traps

Received: 11 March 2010
Revised: 26 April 2010
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	42.60.By	(Design of specific laser systems)
	42.60.Lh	(Efficiency, stability, gain, and other operational parameters)
	42.65.Re	(Ultrafast processes; optical pulse generation and pulse compression)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045, 60506001, 60836003 and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017).

Cite this article:

Ji Lian(季莲), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Liu Zong-Shun(刘宗顺), Zeng Chang(曾畅), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Wang Hui(王辉), Duan Li-Hong(段俐宏), and Yang Hui(杨辉) Time delay in InGaN multiple quantum well laser diodes at room temperature 2010 Chin. Phys. B 19 124211

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Time delay in InGaN multiple quantum well laser diodes at room temperature

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