STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

doi:10.1088/1674-1056/19/10/106102

Abstract Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched D_B steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits.

Keywords: pit facet homoepitaxy Si(001)

Received: 09 February 2010
Revised: 13 May 2010
Accepted manuscript online:

PACS:	68.35.B-	(Structure of clean surfaces (and surface reconstruction))
	68.35.Dv	(Composition, segregation; defects and impurities)
	68.35.Fx	(Diffusion; interface formation)
	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	68.55.A-	(Nucleation and growth)
	81.40.Gh	(Other heat and thermomechanical treatments)

Fund: Project supported by the grants from the National University of Singapore (R-144-000-069-101) and the SERC of Singapore (R-144-000-088-305).

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Xu Mao-Jie(徐茂杰), Jeyanthinath Mayandi, Wang Xue-Sen(王学森), Jia Jin-Feng(贾金锋),Xue Qi-Kun(薛其坤), and Dou Xiao-Ming(窦晓鸣) STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface 2010 Chin. Phys. B 19 106102

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STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

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