Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y2Si2O7

doi:10.1088/1674-1056/19/1/017702

Abstract This paper reports that single-phase $\gamma$ -Y₂Si₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of $\gamma$ -Y₂Si₂O₇ as a function of the temperature and frequency. The $\gamma$ -Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 ℃ in the range of 7.3--18 GHz. The mechanism for polarization relaxation of the as-prepared $\gamma$ -Y₂Si₂O₇ differing from that of SiO₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

Keywords: $\gamma$-Y₂Si₂O₇ dielectric properties structural relaxation polarization low dielectric loss

Received: 31 December 2008
Revised: 05 June 2009
Accepted manuscript online:

PACS:	77.22.Gm	(Dielectric loss and relaxation)
	77.22.Ej	(Polarization and depolarization)
	81.20.Fw	(Sol-gel processing, precipitation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872159) and the National Defense Pre-research Foundation of China (Grant Nos. 513180303 and A2220061080).

Cite this article:

Hou Zhi-Ling(侯志灵), Cao Mao-Sheng(曹茂盛), Yuan Jie(袁杰), and Song Wei-Li(宋维力) Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y₂Si₂O₇ 2010 Chin. Phys. B 19 017702

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Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y2Si2O7

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Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y₂Si₂O₇