Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films
Fang Ze-Bo(方泽波)a)b), Zhu Yan-Yan(朱燕艳)a), Wang Jia-Le(王佳乐)a), and Jiang Zui-Min(蒋最敏)a)†
a Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China; b Department of Physics, Shaoxing University, Shaoxing 312000, China
Abstract Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700℃. The capacitance in the accumulation region of Er2O3 films annealed at 450℃ is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38× 10-4 A/cm2 at a bias of -1 V) due to the evolution of morphology and composition of the films after they are annealed.
Received: 22 November 2008
Revised: 13 February 2009
Accepted manuscript online:
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: Project supported by
the China Postdoctoral Science Foundation and Shaoxing Science and
Technology Commission (Grant No 2007A21015), also partially
supported by the Project of Shanghai Nanotechnology (Grant No
0852NM02400) and the National Natural Science Foundation of China
(Grant No 60806031).
Cite this article:
Fang Ze-Bo(方泽波), Zhu Yan-Yan(朱燕艳), Wang Jia-Le(王佳乐), and Jiang Zui-Min(蒋最敏) Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films 2009 Chin. Phys. B 18 3542
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