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Chin. Phys. B, 2009, Vol. 18(6): 02393    DOI: 10.1088/1674-1056/18/6/046

High-performance evanescently-coupled uni-traveling-carrier photodiodes

Zhang Yun-Xiao, Liao Zai-Yi, Wang Wei
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36~A/W, a bandwidth of 11.5~GHz and a small-signal 1-dB compression current greater than 18~mA at 10~GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.
Keywords:  1-dB compression current      evanescently-coupled uni-traveling-carrier photodiode      multimode diluted waveguide      beam propagation method     
Received:  22 October 2008      Published:  20 June 2009
PACS:  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
Fund: Project supported by the National High Technology Research and Development of China (Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417), the State Key Development Program for Basic Research of China (Grant Nos 2006CB604901 and 2006CB604902), and the National Natural Science Foundation of China (Grant Nos 90401025, 60736036,60706009 and 60777021).

Cite this article: 

Zhang Yun-Xiao, Liao Zai-Yi, Wang Wei High-performance evanescently-coupled uni-traveling-carrier photodiodes 2009 Chin. Phys. B 18 02393

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