Please wait a minute...
Chin. Phys. B, 2009, Vol. 18(6): 2223-2228    DOI: 10.1088/1674-1056/18/6/020
NUCLEAR PHYSICS Prev   Next  

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

Guo Jian-Chuan(郭剑川), Zuo Yu-Hua(左玉华), Zhang Yun(张云), Ding Wu-Chang(丁武昌), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.
Keywords:  electrical bandwidth      frequency response      optical delay      photodetectors  
Received:  01 July 2008      Revised:  30 December 2008      Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
Fund: Project supported by the Major State Basic Research Program of China (Grant No 2006CB302802).

Cite this article: 

Guo Jian-Chuan(郭剑川), Zuo Yu-Hua(左玉华), Zhang Yun(张云), Ding Wu-Chang(丁武昌), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors 2009 Chin. Phys. B 18 2223

[1] High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices
Junkai Jiang(蒋俊锴), Faran Chang(常发冉), Wenguang Zhou(周文广), Nong Li(李农), Weiqiang Chen(陈伟强), Dongwei Jiang(蒋洞微), Hongyue Hao(郝宏玥), Guowei Wang(王国伟), Donghai Wu(吴东海), Yingqiang Xu(徐应强), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2023, 32(3): 038503.
[2] Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation
Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(1): 016701.
[3] Ultraviolet irradiation dosimeter based on persistent photoconductivity effect of ZnO
Chao-Jun Wang(王朝骏), Xun Yang(杨珣), Jin-Hao Zang(臧金浩), Yan-Cheng Chen(陈彦成), Chao-Nan Lin(林超男), Zhong-Xia Liu(刘忠侠), Chong-Xin Shan(单崇新). Chin. Phys. B, 2020, 29(5): 058504.
[4] High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers
Xiao-Qian Du(杜小倩), Chong Li(李冲), Ben Li(黎奔), Nan Wang(王楠), Yue Zhao(赵越), Fan Yang(杨帆), Kai Yu(余凯), Lin Zhou(周琳), Xiu-Li Li(李秀丽), Bu-Wen Cheng(成步文), Chun-Lai Xue(薛春来). Chin. Phys. B, 2019, 28(6): 064208.
[5] Fullerene-based electrode interlayers for bandgap tunable organometal perovskite metal-semiconductor-metal photodetectors
Wen Luo(罗文), Li-Zhi Yan(闫立志), Rong Liu(刘荣), Tao-Yu Zou(邹涛隅), Hang Zhou(周航). Chin. Phys. B, 2019, 28(4): 047804.
[6] Photodetectors based on small-molecule organic semiconductor crystals
Jing Pan(潘京), Wei Deng(邓巍), Xiuzhen Xu(徐秀真), Tianhao Jiang(姜天昊), Xiujuan Zhang(张秀娟), Jiansheng Jie(揭建胜). Chin. Phys. B, 2019, 28(3): 038102.
[7] Progress in quantum well and quantum cascade infrared photodetectors in SITP
Xiaohao Zhou(周孝好), Ning Li(李宁), Wei Lu(陆卫). Chin. Phys. B, 2019, 28(2): 027801.
[8] Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots
Jinming Hu(胡津铭), Yuansheng Shi(史源盛), Zhenheng Zhang(张珍衡), Ruonan Zhi(智若楠), Shengyi Yang(杨盛谊), Bingsuo Zou(邹炳锁). Chin. Phys. B, 2019, 28(2): 020701.
[9] Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors
Cheng-Yun Hong(洪成允), Gang-Feng Huang(黄刚锋), Wen-Wen Yao(要文文), Jia-Jun Deng(邓加军), Xiao-Long Liu(刘小龙). Chin. Phys. B, 2019, 28(12): 128502.
[10] Electrical transport and optical properties of Cd3As2 thin films
Yun-Kun Yang(杨运坤), Fa-Xian Xiu(修发贤), Feng-Qiu Wang(王枫秋), Jun Wang(王军), Yi Shi(施毅). Chin. Phys. B, 2019, 28(10): 107502.
[11] Metal halide perovskite photodetectors: Material featuresand device engineering
Ye Wang(王烨), Meng-Lei Gao(高孟磊), Jin-Liang Wu(吴金良), Xing-Wang Zhang(张兴旺). Chin. Phys. B, 2019, 28(1): 018502.
[12] Photodetectors based on two-dimensional materials and organic thin-film heterojunctions
Jiayue Han(韩嘉悦), Jun Wang(王军). Chin. Phys. B, 2019, 28(1): 017103.
[13] Room-temperature infrared photodetectors with hybrid structure based on two-dimensional materials
Tiande Liu(刘天德), Lei Tong(童磊), Xinyu Huang(黄鑫宇), Lei Ye(叶镭). Chin. Phys. B, 2019, 28(1): 017302.
[14] Photodetectors based on inorganic halide perovskites: Materials and devices
Ying Li(李营), Zhi-Feng Shi(史志锋), Xin-Jian Li(李新建), Chong-Xin Shan(单崇新). Chin. Phys. B, 2019, 28(1): 017803.
[15] The electric field and frequency responses of giant electrorheological fluids
Hanqing Zhao(赵汉青), Rong Shen(沈容), Kunquan Lu(陆坤权). Chin. Phys. B, 2018, 27(7): 078301.
No Suggested Reading articles found!