The study of a new n/p tunnel recombination junction and its application in a-Si:H/$\mu$c-Si:H tandem solar cells
Li Gui-Jun(李贵君), Hou Guo-Fu(侯国付)†, Han Xiao-Yan(韩晓艳), Yuan Yu-Jie(袁育洁), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhao Yin(赵颖), and Geng Xin-Hua(耿新华)
Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China Key Laboratory of Opto-Electronic Information Sci
Abstract This paper reports that a double N layer (a-Si:H/$\mu$c-Si:H) is used to substitute the single microcrystalline silicon n layer (n-$\mu$c-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/$\mu$c-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current--voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/$\mu$c-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
Received: 30 May 2008
Revised: 22 August 2008
Accepted manuscript online:
Fund: Project
supported by the State Key Development Program for Basic Research of
China (Grant Nos 2006CB202602 and 2006CB202603), and the National
Natural Science Foundation of China (Grant No
60506003).
Cite this article:
Li Gui-Jun(李贵君), Hou Guo-Fu(侯国付), Han Xiao-Yan(韩晓艳), Yuan Yu-Jie(袁育洁), Wei Chang-Chun(魏长春), Sun Jian(孙建), Zhao Yin(赵颖), and Geng Xin-Hua(耿新华) The study of a new n/p tunnel recombination junction and its application in a-Si:H/$\mu$c-Si:H tandem solar cells 2009 Chin. Phys. B 18 1674
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