Abstract This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25℃--85℃ and 20% in -55℃--25℃.
Received: 07 July 2008
Revised: 18 July 2008
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Cite this article:
Zhang You-Run(张有润), Zhang Bo(张波), Li Ze-Hong(李泽宏), Lai Chang-Jin(赖昌菁), and Li Zhao-Ji(李肇基) Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device 2009 Chin. Phys. B 18 763
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