Abstract Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I--V--T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.
Received: 13 February 2009
Revised: 13 May 2009
Accepted manuscript online:
(Field emission, ionization, evaporation, and desorption)
Fund: Project supported by the Foundation
of Key Laboratory of General Armament Department, China (Grant No
5132030102QT0101).
Cite this article:
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) High-temperature current conduction through three kinds of Schottky diodes 2009 Chin. Phys. B 18 5029
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