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Chin. Phys. B, 2008, Vol. 17(5): 1845-1847    DOI: 10.1088/1674-1056/17/5/049
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Prev   Next  

The effect of configuration complex on dielectronic recombination process in highly ionized plasmas

Jiao Rong-Zhen(焦荣珍) and Feng Chen-Xu(冯晨旭)
School of Sciences, Beijing University of Posts and Telecommunications, Beijing 100876, China
Abstract  This paper analyses the effect of configuration complex on dielectronic recombination (DR) process in highly ionized plasmas (Xe26+, Dy38+, W46+) by using the multiconfiguration relativistic Hartree--Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d94l'4l' and through 3d94l'5l'' is emphasized. The trend of DR through 3d94l'4l'' shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.
Keywords:  dielectronic recombination      autoionization      radiative-decay  
Received:  03 February 2007      Revised:  23 August 2007      Accepted manuscript online: 
PACS:  52.25.Jm (Ionization of plasmas)  
  31.15.xr (Self-consistent-field methods)  
  32.80.Zb (Autoionization)  
  34.80.Lx (Recombination, attachment, and positronium formation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60054402).

Cite this article: 

Jiao Rong-Zhen(焦荣珍) and Feng Chen-Xu(冯晨旭) The effect of configuration complex on dielectronic recombination process in highly ionized plasmas 2008 Chin. Phys. B 17 1845

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