Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films
Chen Yong-Sheng (陈永生)a)b)†, Yang Shi-E(杨仕娥)a), Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)a), Gao Xiao-Yong(郜小勇)a), Gu Jin-Hua(谷景华)a), Zheng Wen(郑文)a), and Zhao Shang-Li(赵尚丽)a)
aKey Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China; bInstitute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; cDepart of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China
Abstract Using diborane as doping gas, p-doped $\mu $c-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of $\mu $c-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped $\mu $c-Si:H films with a dark conductivity as high as 1.42 $\Omega ^{ - 1}\cdot$cm$^{ - 1}$ and a crystallinity of above 50% are obtained. With this p-layer, $\mu $c-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped $\mu $c-Si:H layers is discussed.
Received: 17 October 2007
Revised: 21 November 2007
Accepted manuscript online:
Fund: Project supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan province, China
(Grant No 072300410140).
Cite this article:
Chen Yong-Sheng (陈永生), Yang Shi-E(杨仕娥), Wang Jian-Hua(汪建华), Lu Jing-Xiao(卢景霄), Gao Xiao-Yong(郜小勇), Gu Jin-Hua(谷景华), Zheng Wen(郑文), and Zhao Shang-Li(赵尚丽) Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films 2008 Chin. Phys. B 17 1394
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