Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

doi:10.1088/1009-1963/16/4/047

Abstract

Abstract Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.

Keywords: NBTI recovery interface states oxide positive charges

Received: 13 August 2006
Revised: 20 October 2006
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No~60376024) and the National High Technology Research and Development Program of China (Grant No~2003AA1Z1630).

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Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Zhang Yue(张月), Yu Lei(于磊), Zhu Zhi-Wei(朱志炜), and Chen Hai-Feng(陈海峰) Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs 2007 Chinese Physics 16 1140

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Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

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