n-type ZnS used as electron transport material in organic light-emitting diodes
Du Peng (杜鹏), Zhang Xi-Qing (张希清), Sun Xue-Bai (孙学柏), Yao Zhi-Gang (姚志刚), Wang Yong-Sheng (王永生)
Key Laboratory of Luminescence and Optical Information, Ministry of Education,China;Institute of Optoelectronic Technology, Beijing Jiaotong University,Beijing 100044, China
Abstract This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes (OLEDs). The naphthyl-substituted benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium (Alq$_{3})$ are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures: indium--tin-oxide (ITO)/NPB/Alq$_{3}$/ZnS/LiF/AL, ITO/NPB/Alq$_{3}$/LiF/AL and ITO/NPB/Alq$_{3}$/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.
Received: 21 November 2005
Revised: 09 January 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60476005), the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No 2003CB314707), and the Key Project of National Natural Science Foundation of China (Grant No 50532090).
Cite this article:
Du Peng (杜鹏), Zhang Xi-Qing (张希清), Sun Xue-Bai (孙学柏), Yao Zhi-Gang (姚志刚), Wang Yong-Sheng (王永生) n-type ZnS used as electron transport material in organic light-emitting diodes 2006 Chinese Physics 15 1370
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