Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute, Xidian University, Xi'an 710071,China
Abstract Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity, and conduction band discontinuity at the interface between AlGaN and GaN, the temperature dependence of transconductance for AlGaN/GaN heterojunction field effect transistors (HFETs) has been obtained by using a quasi-two-dimensional approach, and the calculated results are in good agreement with the experimental data. The reduction in transconductance at high temperatures is primarily due to the decrease in electron mobility in the channel. Calculations also demonstrate that the self-heating effect becomes serious as environment temperature increases.
Received: 02 June 2005
Revised: 03 November 2005
Accepted manuscript online:
Fund: Project supported by the National Basic Research Program of China (Grant No 2002CB311904).
Cite this article:
Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures 2006 Chinese Physics 15 636
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