Please wait a minute...
Chinese Physics, 2005, Vol. 14(1): 201-207    DOI: 10.1088/1009-1963/14/1/037
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Resonant tunnelling in parabolic quantum well structures under a uniform transverse magnetic field

Gong Jian (宫箭)a, Liang Xi-Xia (梁希侠)ab, Ban Shi-Liang (班士良)ab
a Department of Physics, College of Sciences and Technology, Inner Mongolia University, Hohhot 010021, China; bCCAST (Word Laboratory), Beijing 100080, China
Abstract  The resonant tunnelling through parabolic quantum well structures under a uniform transverse magnetic field is investigated by a simple numerical method. Numerical results of the transmission coefficient are obtained for several GaAs--AlxGa1-xAs parabolic well structures. It is found that the resonant peaks shift towards the higher energy region as the magnetic field increases, and some new resonant peaks emerge when the magnetic field becomes stronger. The J-V characteristics of a parabolic quantum well are discussed for the cyclotron centre located at different positions. It is also found that the cyclotron centre located at the parabolic well centre is helpful to explain the experiment, and the peak current densities decrease and shift to higher bias with the increase of magnetic field. The influence of mixed crystal effect on the J-V characteristic under a uniform transverse magnetic field is also investigated.
Keywords:  resonant tunnelling      parabolic quantum well      transverse magnetic field  
Received:  28 May 2004      Revised:  16 September 2004      Accepted manuscript online: 
PACS:  7320D  
  7340G  
Fund: Project supported partly by the National Natural Science Foundation of China (Grant No 10164003) and the Foundation for University Key Teachers by the Ministry of Education (Grant No GG-140-10126-1005)

Cite this article: 

Gong Jian (宫箭), Liang Xi-Xia (梁希侠), Ban Shi-Liang (班士良) Resonant tunnelling in parabolic quantum well structures under a uniform transverse magnetic field 2005 Chinese Physics 14 201

[1] Intersubband optical absorption of electrons in double parabolic quantum wells of AlxGa1-xAs/AlyGa1-yAs
Shu-Fang Ma(马淑芳), Yuan Qu(屈媛), Shi-Liang Ban(班士良). Chin. Phys. B, 2018, 27(2): 027103.
[2] Electronic Raman scattering in double semi-parabolic quantum wells
N. Zamani, A. Keshavarz, M. J. Karimi. Chin. Phys. B, 2013, 22(5): 057802.
[3] Plasmons in a free-standing nanorod with a two-dimensional parabolic quantum well caused by surface states
Song Ya-Feng(宋亚峰), Lü Yan-Wu(吕燕伍), Wen Wei(文伟), Liu Xiang-Lin(刘祥林), Yang Shao-Yan(杨少延), Zhu Qin-Sheng(朱勤生), and Wang Zhan-Guo(王占国) . Chin. Phys. B, 2012, 21(5): 057302.
[4] Pressure effect study on the IV property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
Li Qiu-Zhu(李秋柱), Wang Kai-Qun(王楷群), Jian Ao-Qun(菅傲群), Liu Xin(刘鑫), and Zhang Bin-Zhen(张斌珍). Chin. Phys. B, 2010, 19(4): 047310.
[5] A novel micro-accelerometer with adjustable sensitivity based on resonant tunneling diodes
Xiong Ji-Jun(熊继军), Mao Hai-Yang(毛海央), Zhang Wen-Dong(张文栋), and Wang Kai-Qun(王楷群). Chin. Phys. B, 2009, 18(3): 1242-1247.
[6] Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
Zhang Yang(张杨), Han Chun-Lin(韩春林), Gao Jian-Feng(高建峰), Zhu Zhan-Ping(朱战平), Wang Bao-Qiang(王保强), and Zeng Yi-Ping(曾一平) . Chin. Phys. B, 2008, 17(4): 1472-1474.
[7] Resonant tunnelling of electrons in multi-step single-barrier heterostructures
Wang Chang(王长) and Zhang Yong-Hua(张拥华). Chin. Phys. B, 2006, 15(9): 2120-2124.
[8] Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华). Chin. Phys. B, 2006, 15(6): 1335-1338.
[9] A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣). Chin. Phys. B, 2006, 15(10): 2422-2426.
[10] Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes
Zhang Xiao-Xin (张晓昕), Zeng Yi-Ping (曾一平), Wang Xiao-Guang (王晓光), Wang Bao-Qiang (王保强), Zhu Zhan-Ping (朱占平). Chin. Phys. B, 2004, 13(9): 1560-1563.
[11] Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields
Zhang Xiao-Xin (张晓昕), Zeng Yi-Ping (曾一平), Qiu Zhi-Jun (仇志军), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平). Chin. Phys. B, 2004, 13(6): 954-957.
[12] Thermally-assisted tunnelling of magnetization in (Mn0.96Cr0.04)12-ac
He Lun-Hua (何伦华), Cao Hui-Bo (曹慧波), Wang Fang-Wei (王芳卫). Chin. Phys. B, 2004, 13(11): 1962-1964.
No Suggested Reading articles found!