Abstract Based on 4H-SiC material parameters, three different analytical expressions are used to characterize the electron mobility as the function of electric field. The first model is based on simple saturation of the steady-state drift velocity with electric field (conventional three-parameter model for silicon). The second GaAs-based mobility model partially reflects the peak velocity in high electric fields. The third multi-parameter model proposed in this paper is more realistic since it well reproduces the drift velocity－field characteristics obtained by Monte Carlo calculations, revealing the peak drift velocity with subsequent saturation at higher electric fields. Thus, the drift velocity model presented in this paper is much better for device simulation. In this paper, the influence of mobility model on DC characteristics of 4H-SiC MESFET is calculated and the better accordance with the experimental results is presented with multi-parameter model.
Received: 08 October 2003
Revised: 26 December 2003
Accepted manuscript online:
Fund: Project supported by the National Key Basic Research Special Foundation of China (Grant No 2002CB311904) and by the National Defence Pre-research Foundation of China (Grant No 41308060107).
Cite this article:
Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) Analytical model of electron transport characteristics for 4H-SiC material and devices 2004 Chinese Physics 13 1100
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
