Abstract Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.
Received: 16 May 2002
Revised: 08 July 2002
Accepted manuscript online:
(Methods of micro- and nanofabrication and processing)
Fund: Project supported by the National Science Foundation of China (Grant Nos 60176006 and 60025410) and by the Nano Science and Technology Project of Chinese Academy of Sciences.
Cite this article:
Zhou Da-Yong (周大勇), Lan Qing (澜清), Kong Yun-Chuan (孔云川), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川) Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy 2003 Chinese Physics 12 218
Mobility limited by cluster scattering in ternary alloy quantum wires Zhang Heng (张恒), Yang Shao-Yan (杨少延), Liu Gui-Peng (刘贵鹏), Wang Jian-Xia (王建霞), Jin Dong-Dong (金东东), Li Hui-Jie (李辉杰), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国). Chin. Phys. B, 2014, 23(1): 017305.
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