Electroluminescence from Si/SiO2 films deposited on p-Si substrates
Ma Shu-Yi (马书懿)a, Xiao Yong (萧勇)b, Chen Hui (陈辉)a
a Department of Physics, Northwest Normal University, Lanzhou 730070, China; b Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
Abstract The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a very good rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structure at a forward bias of 5V or larger. A broad band with one peak around 650－660 nm appears in all the EL spectra of the structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on EL spectra are studied systematically.
Received: 19 January 2002
Revised: 16 April 2002
Accepted manuscript online:
Fund: Project supported by the Foundation of Education Commission of Gansu Province, China (Grant No 981-17), and the Youth Foundation (Grant No 2001-26) and KJCXGC Foundation (Grant No 2001-2-14) of NWNU.
Cite this article:
Ma Shu-Yi (马书懿), Xiao Yong (萧勇), Chen Hui (陈辉) Electroluminescence from Si/SiO2 films deposited on p-Si substrates 2002 Chinese Physics 11 960
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
