a Laboratory of Structure Analysis, University of Science and Technology of China, Hefei 230026, China; b Institute of Semiconductor, Academia Sinica, Beijing 100083, China
Abstract The formation and band lineup of the Ge/InP(100) interface with or without alkali metal Cs intralayer (IL) are studied by means of X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). It is found that the Cs atoms do not react with or diffuse into the subatrate and the Ge overlayer. The thin Cs IL will induce an increase of the valence band offset ($\Delta$Ev) for the Ge/InP(100) heterojunction. The changes of $\Delta$Ev are proportional to the IL thickness and them saturate for IL thickness of about one half of a monolayer of Cs IL. Without the IL, $\Delta$Ev of the Ge/InP(100) heterojunction is equal to 0.70eV, and $\Delta$Ev with one half of monolayer IL is up to 0.90eV. These results show that the interface dipole plays a major role in the band lineup at the heterojunction interface.
Received: 03 March 1993
Accepted manuscript online:
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
Fund: Project supported by the National Natural Science Foundation of China and the Laboratory of Structure Analysis, University of Science and Technology of China.
Cite this article:
XU SHI-HONG (徐世红), XU PENG-SHOU (徐彭寿), ZHU JING-SHENG (朱警生), LIU XIAN-MING (刘先明), ZHANG YU-HENG (张裕恒), XU ZHEN-JIA (许振嘉) PHOTOELECTRON SPECTROSCOPIC STUDY OF THE EFFECT OF Cs INTRALAYER ON THE BAND LINEUP OF Ge/InP(100) HETEROJUNCTION 1994 Acta Physica Sinica (Overseas Edition) 3 208
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