From microelectronics to spintronics and magnonics

doi:10.1088/1674-1056/ac9048

Abstract In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.

Keywords: magnon valve effect magnon junction effect magnon resonant tunneling effect magnon-transfer torque effect

Received: 18 June 2022
Revised: 02 September 2022
Accepted manuscript online: 08 September 2022

PACS:	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)
	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
	75.76.+j	(Spin transport effects)

Fund: Project supported by the National Key Research and Development Program of China (Grants No. 2017YFA0206200), the National Natural Science Foundation of China (Grant Nos. 51831012 and 12134107), and the Beijing Natural Science Foundation (Grant No. Z201100004220006).

Corresponding Authors: Xiu-Feng Han
E-mail: xfhan@iphy.ac.cn

Cite this article:

Xiu-Feng Han(韩秀峰), Cai-Hua Wan(万蔡华), Hao Wu(吴昊), Chen-Yang Guo(郭晨阳), Ping Tang(唐萍), Zheng-Ren Yan(严政人), Yao-Wen Xing(邢耀文), Wen-Qing He(何文卿), and Guo-Qiang Yu(于国强) From microelectronics to spintronics and magnonics 2022 Chin. Phys. B 31 117504

[1] Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
[2] Jurczak M, Collaert N, Veloso A, Hoffmann T and Biesemans S 2009 IEEE International SOI Conference, 5-8 October, 2009, pp. 1-4
[3] Colinge J P, Gao M H, Romano-Rodriguez A, Maes H and Claeys C 1990 International Technical Digest on Electron Devices, 9-12 December, 1990, pp. 595-598
[4] Moore S K 2019 IEEE Spectrum 56 9
[5] Baibich M N, Broto J M, Fert A, Van Dau F N, Petroff F, Etienne P, Creuzet G, Friederich A and Chazelas J 1988 Phys. Rev. Lett. 61 2472
[6] Binasch G, Grünberg P, Saurenbach F and Zinn W 1989 Phys. Rev. B 39 4828
[7] Moser A, Takano K, Margulies D T, Albrecht M, Sonobe Y, Ikeda Y, Sun S and Fullerton E 2002 E J. Phys. D: Appl. Phys. 35 R157
[8] Julliere M 1975 Phys. Lett. A 54 225
[9] Miyazaki T and Tezuka N 1995 J. Magn. Magn. Mater. 139 L231
[10] Moodera J S, Kinder L R, Wong T M and Meservey R 1995 Phys. Rev. Lett. 74 3273
[11] Han X F, Oogane M, Kubota H, Ando Y and Miyazaki T 2000 Appl. Phys. Lett. 77 283
[12] Wei H X, Qin Q H, Ma M, Sharif R and Han X F 2007 J. Appl. Phys. 101 09B501
[13] Butler W H, Zhang X G, Schulthess T C and MacLaren J M 2001 Phys. Rev. B 63 054416
[14] Parkin S S P, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M and Yang S H 2004 Nat. Mater. 3 862
[15] Yuasa S, Nagahama T, Fukushima A, Suzuki Y and Ando K 2004 Nat. Mater. 3 868
[16] Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F and Ohno H 2008 Appl. Phys. Lett. 93 082508
[17] Zhang J, Zhang X G and Han X F 2012 Appl. Phys. Lett. 100 222401
[18] Miura Y, Muramoto S, Abe K and Shirai M 2012 Phys. Rev. B 86 024426
[19] Tao B S, Li D L, Yuan Z H, Liu H F, Ali S S, Feng J F, Wei H X, Han X F, Liu Y, Zhao Y G, Zhang Q, Guo Z B and Zhang X X 2014 Appl. Phys. Lett. 105 102407
[20] Tao B S, Yang H X, Zuo Y L, Devaux X, Lengaigne G, Hehn M, Lacour D, Andrieu S, Chshiev M, Hauet T, Montaigne F, Mangin S, Han X F and Lu Y 2015 Phys. Rev. Lett. 115 157204
[21] Tao B, Wan C, Tang P, Feng J, Wei H, Wang X, Andrieu S, Yang H, Chshiev M, Devaux X, Hauet T, Montaigne F, Mangin S, Hehn M, Lacour D, Han X and Lu Y 2019 Nano Lett. 19 3019
[22] Scheike T, Wen Z C, Sukegawaa H and Mitani S 2022 Appl. Phys. Lett. 120 032404
[23] Ralph D C and Stiles M D 2008 J. Magn. Magn. Mater. 320 1190
[24] Liu L, Pai C F, Li Y, Tseng H W, Ralph D C and Buhrman R A 2012 Science 336 555
[25] Miron I M, Garello K, Gaudin G, Zermatten P J, Costache M V, Auffret S, Bandiera S, Rodmacq B, Schuhl A and Gambardella P 2011 Nature 476 189
[26] Wang W G, Li M, Hageman S and Chien C L 2012 Nat. Mater. 11 64
[27] Maruyama T, Shiota Y, Nozaki T, Ohta K, Toda N, Mizuguchi M, Tulapurkar A A, Shinjo T, Shiraishi M, Mizukami S, Ando Y and Suzuki Y 2009 Nat. Nanotech. 4 158
[28] Fiebig M, Lottermoser T, Meier D and Trassin M 2016 Nat. Rev. Mater. 1 16046
[29] Khvalkovskiy A V, Apalkov D, Watts S, Chepulskii R, Beach R S, Ong A, Tang X, Driskill-Smith A, Butler W H, Visscher P B, Lottis D, Chen E, Nikitin V and Krounbi M 2013 J. Phys. D: Appl. Phys. 46 074001
[30] Qin J, Wang X, Qu T, Wan C, Huang L, Guo C, Yu T, Wei H and Han X 2019 Appl. Phys. Lett. 114 112401
[31] Garello K, Yasin F and Kar G S 2019 IEEE 11$th International Memory Workshop (IMW), 12-15 May, 2019, pp. 1-4
[32] Qu Y, Han J, Cockburn B F, Pedrycz W, Zhang Y and Zhao W 2017 Design Automation & Test in Europe Conference & Exhibition, 27-31 March, 2017, pp. 606-609
[33] Lv Y and Wang J P 2017 IEEE International Electron Devices Meeting (IEDM), 2-6 December, 2017, pp. 36.2.1-36.2.4
[34] Zeng Z, Finocchio G, Zhang B, Amiri P K, Katine J A, Krivorotov I N, Huai Y, Langer J, Azzerboni B, Wang K L and Jiang H 2013 Sci. Rep. 3 1426
[35] Qin J, Chen X, Yu T, Wang X, Guo C, Wan C, Feng J, Wei H, Liu Y and Han X 2018 Phys. Rev. Appl. 10 044067
[36] Chen X, Qin J, Yu T, Han X F and Liu Y 2018 Appl. Phys. Lett. 113 142406
[37] Fang B, Carpentieri M, Hao X, Jiang H, Katine J A, Krivorotov I N, Ocker B, Langer J, Wang K L, Zhang B, Azzerboni B, Amiri P K, Finocchio G and Zeng Z 2016 Nat. Commun. 7 11259
[38] Hong J, Li X, Xu N, Chen H, Cabrini S, Khizroev S, Bokor J and You L 2020 Adv. Intell. Syst. 2 2000143
[39] Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan H D, Endo M, Kanai S, Hayakawa J, Matsukura F and Ohno H 2010 Nat. Mater. 9 721
[40] Lee S E, Takemura Y and Park J G 2016 Appl. Phys. Lett. 109 182405
[41] Wang Y, Lu Z Y, Zhang X G and Han X F 2006 Phys. Rev. Lett. 97 087210
[42] Zhang X G, Wen Z C, Wei H X and Han X F 2010 Phys. Rev. B 81 155122
[43] Han X, Wang X, Wan C, Yu G and Lv X 2021 Appl. Phys. Lett. 118 120502
[44] Natsui M, Tamakoshi A, Honjo H, Watanabe T, Nasuno T, Zhang C, Tanigawa T, Inoue H, Niwa M, Yoshiduka T, Noguchi Y, Yasuhira M, Ma Y, Shen H, Fukami S, Sato H, Ikeda S, Ohno H, Endoh T and Hanyu T 2020 IEEE Symposium on VLSI Circuits, 16-19 June, 2020, pp. 1-2
[45] Song M Y, Lee C M, Yang S Y, Chen G L, Chen K M, Wang I J, Hsin Y C, Chang K T, Hsu C F, Li S H, Wei J H, Lee T Y, Chang M F, Bao X Y, Diaz C H Lin and S J 2022 IEEE Symposium on VLSI Technology & Circuits, 16 June, 2022, pp. 377-378
[46] Barman A, Gubbiotti G, Ladak S, et al. 2021 J. Phys.: Condens. Matter 33 413001
[47] Chumak A V, Serga A A, Hillebrands B and Kostylev M P 2008 Appl. Phys. Lett. 93 022508
[48] Chumak A V, Serga A A and Hillebrands B 2014 Nat. Commun. 5 4700
[49] Gertz F, Kozhevnikov A V, Filimonov Y A, Nikonov D E and Khitun A 2015 IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 67
[50] Demokritov S O, Demidov V E, Dzyapko O, Melkov G A, Serga A A, Hillebrands B and Slavin A N 2006 Nature 443 430
[51] Kampfrath T, Sell A, Klatt G, Pashkin A, Mährlein S, Dekorsy T, Wolf M, Fiebig M, Leitenstorfer A and Huber R 2011 Nat. Photon. 5 31
[52] Zare Rameshti B, Viola Kusminskiy S, Haigh J A, Usami K, Lachance-Quirion D, Nakamura Y, Hu C M, Tang H X, Bauer G E W and Blanter Y M 2022 Phys. Rep. 979 1
[53] Zhang S S L and Zhang S 2012 Phys. Rev. Lett. 109 096603
[54] Cornelissen L J, Liu J, Duine R A, Youssef J B and van Wees B J 2015 Nat. Phys. 11 1022
[55] Wu H, Wan C H, Zhang X, Yuan Z H, Zhang Q T, Qin J Y, Wei H X, Han X F and Zhang S 2016 Phys. Rev. B 93 060403
[56] Li J, Xu Y, Aldosary M, Tang C, Lin Z, Zhang S, Lake R and Shi J 2016 Nat. Commun. 7 10858
[57] Lebrun R, Ross A, Bender S A, Qaiumzadeh A, Baldrati L, Cramer J, Brataas A, Duine R A and Kläui M 2018 Nature 561 222
[58] Qu D, Huang S Y, Hu J, Wu R and Chien C L 2013 Phys. Rev. Lett. 110 067206
[59] Kikkawa T, Uchida K, Shiomi Y, Qiu Z, Hou D, Tian D, Nakayama H, Jin X F and Saitoh E 2013 Phys. Rev. Lett. 110 067207
[60] Wu H, Huang L, Fang C, Yang B S, Wan C H, Yu G Q, Feng J F, Wei H X and Han X F 2018 Phys. Rev. Lett. 120 097205
[61] Guo C Y, Wan C H, Wang X, Fang C, Tang P, Kong W J, Zhao M K, Jiang L N, Tao B S, Yu G Q and Han X F 2018 Phys. Rev. B 98 134426
[62] Vilela G L S, Santos E, Abrao J E, Rodrigues A R, Rezende S M, Azevedo A and Moodera J S 2022 Appl. Phys. Lett. 120 082402
[63] He W, Wu H, Guo C, Wan C, Zhao M, Xing Y, Tang P, Yan Z, Xia J, Yu T and Han X 2021 Appl. Phys. Lett. 119 212410
[64] Cramer J, Fuhrmann F, Ritzmann U, Gall V, Niizeki T, Ramos R, Qiu Z, Hou D, Kikkawa T, Sinova J, Nowak U, Saitoh E and Kläui M 2018 Nat. Commun. 9 1089
[65] Cornelissen L J, Liu J, van Wees B J and Duine R A 2018 Phys. Rev. Lett. 120 097702
[66] Wright K 2018 Physics 11 23
[67] Yan Z R, Wan C H and Han X F 2020 Phys. Rev. Appl. 14 044053
[68] Lan J, Yu W and Xiao J 2017 Nat. Commun. 8 178
[69] Guo C Y, Wan C H, He W Q, Zhao M K, Yan Z R, Xing Y W, Wang X, Tang P, Liu Y Z, Zhang S, Liu Y W and Han X F 2020 Nat. Electron. 3 304
[70] Nakayama H, Althammer M, Chen Y T, Uchida K, Kajiwara Y, Kikuchi D, Ohtani T, Geprägs S, Opel M, Takahashi S, Gross R, Bauer G E W, Goennenwein S T B and Saitoh E 2013 Phys. Rev. Lett. 110 206601
[71] Wang Y, Zhu D, Yang Y, Lee K, Mishra R, Go G, Oh S H, Kim D H, Cai K, Liu E, Pollard S D, Shi S, Lee J, Teo K L, Wu Y, Lee K J and Yang H 2019 Science 366 1125
[72] Guo C Y, Wan C H, Zhao M K, Fang C, Ma T Y, Wang X, Yan Z R, He W Q, Xing Y W, Feng J F and Han X F 2021 Phys. Rev. B 104 094412
[73] Avci C O, Quindeau A, Pai C F, Mann M, Caretta L, Tang A S, Onbasli M C, Ross C A and Beach G S D 2017 Nat. Mater. 16 309
[74] Guo C Y, Wan C H, Zhao M K, Wu H, Fang C, Yan Z R, Feng J F, Liu H F and Han X F 2019 Appl. Phys. Lett. 114 192409
[75] Serga A A, Chumak A V and Hillebrands B 2010 J. Phys. D: Appl. Phys. 43 264002
[76] Kruglyak V V, Demokritov S O and Grundler D 2010 J. Phys. D: Appl. Phys. 43 264001
[77] Krawczyk M and Grundler D 2014 J. Phys.: Condens. Matter 26 123202
[78] Chumak A V, Serga A A and Hillebrands B 2017 J. Phys. D: Appl. Phys. 50 244001
[79] Qin H, Holländer R B, Flaj?man L, Hermann F, Dreyer R, Woltersdorf G and van Dijken S 2021 Nat. Commun. 12 2293
[80] Xi H and Xue S 2007 J. Appl. Phys. 101 123905
[81] Kostylev M P, Serga A A, Schneider T, Neumann T, Leven B, Hillebrands B and Stamps R L 2007 Phys. Rev. B 76 184419
[82] Tang P and Han X F 2019 Phys. Rev. B 99 054401
[83] Hansen U H, Gatzen M, Demidov V E and Demokritov S O 2007 Phys. Rev. Lett. 99 127204
[84] Xing Y W, Yan Z R and Han X F 2021 Phys. Rev. B 103 054425
[85] Xing Y W, Yan Z R and Han X F 2022 Phys. Rev. B 105 064427
[86] Yan Z R, Xing Y W and Han X F 2021 Phys. Rev. B 104 L020413
[87] Schoenwald J, Burstein E and Elson J M 1973 Solid State Commun. 12 185

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