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Chin. Phys. B, 2023, Vol. 32(1): 018502    DOI: 10.1088/1674-1056/ac8f38

High throughput N-modular redundancy for error correction design of memristive stateful logic

Xi Zhu(朱熙), Hui Xu(徐晖), Weiping Yang(杨为平), Zhiwei Li(李智炜), Haijun Liu(刘海军), Sen Liu(刘森), Yinan Wang(王义楠), and Hongchang Long(龙泓昌)
College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China
Abstract  Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.
Keywords:  memristor      stateful logic      logic reliability      in-memory computing  
Received:  25 May 2022      Revised:  29 August 2022      Accepted manuscript online:  05 September 2022
PACS:  85.35.-p (Nanoelectronic devices)  
  85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)  
  87.85.Qr (Nanotechnologies-design)  
  84.32.-y (Passive circuit components)  
Fund: Project supported by the National Key Research and Development Plan of the Ministry of Science of Technology of China (Grand Nos. 2019YFB 2205100 and 2019YFB 2205102), the National Natural Science Foundation of China (Grant Nos. 61974164, 62074166, 61804181, 62004219, and 62004220), and the Science Support Program of the National University of Defense and Technology (Grand No. ZK20-06).
Corresponding Authors:  Zhiwei Li, Haijun Liu     E-mail:;

Cite this article: 

Xi Zhu(朱熙), Hui Xu(徐晖), Weiping Yang(杨为平), Zhiwei Li(李智炜), Haijun Liu(刘海军), Sen Liu(刘森), Yinan Wang(王义楠), and Hongchang Long(龙泓昌) High throughput N-modular redundancy for error correction design of memristive stateful logic 2023 Chin. Phys. B 32 018502

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