Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

doi:10.1088/1674-1056/ac7e37

Abstract A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga₂O₃/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga₂O₃, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.

Keywords: diamond Schottky barrier diode junction terminal extension simulation

Received: 24 May 2022
Revised: 23 June 2022
Accepted manuscript online:

PACS:	81.05.ug	(Diamond)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	85.30.Kk	(Junction diodes)
	88.30.gg	(Design and simulation)

Fund: Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001) and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886).

Corresponding Authors: Liu-An Li, Guang-Tian Zou
E-mail: liliuan@jlu.edu.cn;gtzou@jlu.edu.cn

Cite this article:

Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田) Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction 2022 Chin. Phys. B 31 108105

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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction