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Multiple modes of perpendicular magnetization switching scheme in single spin—orbit torque device |
| Tong-Xi Liu(刘桐汐)1, Zhao-Hao Wang(王昭昊)1,†, Min Wang(王旻)1, Chao Wang(王朝)1, Bi Wu(吴比)2, Wei-Qiang Liu(刘伟强)2, and Wei-Sheng Zhao(赵巍胜)1,‡ |
1. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
2. College of Integrated Circuits, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China |
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Abstract Spin—orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is a challenge that so many multiple modes of magnetization switching are integrated together. Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching can be easily changed by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, however, the field-like torque helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed, including the field-like torque strength, the bias field, and the current density. Our proposal can be used to design novel reconfigurable logic circuits in the near future.
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Received: 14 February 2022
Revised: 17 April 2022
Accepted manuscript online:
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PACS:
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75.60.Jk
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(Magnetization reversal mechanisms)
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75.78.Jp
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(Ultrafast magnetization dynamics and switching)
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85.75.Dd
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(Magnetic memory using magnetic tunnel junctions)
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75.70.Tj
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(Spin-orbit effects)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62171013 and 61704005), the National Key Research and Development Program of China (Grant Nos. 2021YFB3601303, 2021YFB3601304, and 2021YFB3601300), the Beijing Municipal Science and Technology Project, China (Grant No. Z201100004220002), and the Fundamental Research Funds for the Central Universities, China (Grant No. YWF-21-BJ-J-1043). |
Corresponding Authors:
Zhao-Hao Wang, Wei-Sheng Zhao
E-mail: zhaohao.wang@buaa.edu.cn;wszhao@buaa.edu.cn
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Cite this article:
Tong-Xi Liu(刘桐汐), Zhao-Hao Wang(王昭昊), Min Wang(王旻), Chao Wang(王朝), Bi Wu(吴比), Wei-Qiang Liu(刘伟强), and Wei-Sheng Zhao(赵巍胜) Multiple modes of perpendicular magnetization switching scheme in single spin—orbit torque device 2022 Chin. Phys. B 31 107501
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[1] Dieny B, Prejbeanu I L, Garello K, et al. 2020 Nat. Electron. 3 446
[2] Guo Z, Yin J, Bai Y, et al. 2021 Proc. IEEE 109 1398
[3] Lee S W and Lee K J 2016 Proc. IEEE 104 1831
[4] Chowdhury Z I, Khatamifard, S K, Zhao Z, et al. 2019 IEEE J. Explor. Solid-State Computat. Devices Circuits 5 206
[5] Zheng Z, Zhang Y, Zhu D, et al. 2020 Chin. Phys. B 29 078505
[6] Honjo H, Nguyen T V A, Watanabe T, et al. 2019 IEDM 28
[7] Cai W, Shi K, Zhuo Y, et al. 2021 IEEE Electron Dev. Lett. 42 704
[8] Fukami S, Anekawa T, Zhang C, et al. 2016 Nat. Nanotechnol. 11 621
[9] Wang M, Cai W, Zhu D, et al. 2018 Nat. Electron. 1 582
[10] Yang M, Deng Y, Wu Z, et al. 2019 IEEE Electron Dev. Lett. 40 1554
[11] Wang M, Wang Z, Wang C, et al. 2021 ACS Appl. Mater. Interfaces 13 20763
[12] Chen B, Lourembam J, Goolaup S, et al. 2019 Appl. Phys. Lett. 114 022401
[13] Legrand W, Ramaswamy R, Mishra R, et al. 2015 Phys. Rev. Appl. 3 064012
[14] Wang M, Wang Z, Zhang X, et al. 2021 IEEE Electron Dev. Lett. 42 148
[15] Fukami S, Zhang C, Duttagupta S P, et al. 2016 Nat. Mater. 15 535
[16] Oh Y W, Baek S H C, Kim Y M, et al. 2016 Nat. Nanotechnol. 11 878
[17] Van den Brink A, Vermijs G, Solignac A, et al. 2016 Nat. Commun. 7 10854
[18] Lau Y C, Betto D, Rode K, et al. 2016 Nat. Nanotechnol. 11 758
[19] Garello K, Yasin F, Hody H, et al. 2019 IEEE Symp. VLSI Technol. T194
[20] Manchon A, Železný J, Miron I M, et al. 2019 Rev. Mod. Phys. 91 035004
[21] Qiu X, Deorani P, Narayanapillai K, et al. 2014 Sci. Rep. 4 4491
[22] Dutta S, Bose A, Tulapurkar A A, et al. 2021 Phys. Rev. B 103 184416
[23] Peng W L, Zhang J Y, Feng G N, et al. 2019 Appl. Phys. Lett. 115 172403
[24] Baez Flores G G and Belashchenko K D 2022 Phys. Rev. B 105 054405 |
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