High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

doi:10.1088/1674-1056/ac673f

Abstract Threshold switching (TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage (0.38 V) and current (200 nA), an extremely steep slope (< 0.1 mV/dec), and a relatively large off/on ratio (> 10³). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.

Keywords: memristors artificial neurons 2D MXene Ge₂Sb₂Te₅

Received: 16 January 2022
Revised: 02 April 2022
Accepted manuscript online: 14 April 2022

PACS:	73.40.-c	(Electronic transport in interface structures)
	83.10.Tv	(Structural and phase changes)
	85.35.-p	(Nanoelectronic devices)
	87.19.lj	(Neuronal network dynamics)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61804079 and 61964012), the open research fund of the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology (Grant No. KFJJ20200102), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK20211273 and BZ2021031), the Nanjing University of Posts and Telecommunications (Grant No. NY220112), and the Foundation of Jiangxi Science and Technology Department (Grant No. 20202ACBL21200).

Corresponding Authors: Lei Wang
E-mail: leiwang1980@njupt.edu.cn

Cite this article:

Xiao-Juan Lian(连晓娟), Jin-Ke Fu(付金科), Zhi-Xuan Gao(高志瑄),Shi-Pu Gu(顾世浦), and Lei Wang(王磊) High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors 2023 Chin. Phys. B 32 017304

[1] Jeong D S and Hwang C S 2018 Adv. Mater. 30 1704729
[2] Yu S 2018 Proc. IEEE 106 260
[3] Wang Z R, Joshi S, Savel'ev S E, Jiang H, Midya R, Lin P, Hu M, Ge N, Strachan J P, Li Z Y, Wu Q, Barnell M, Li G L, Xin H L, Williams R S, Xia Q F and Yang J J 2017 Nat. Mater. 16 101
[4] Qi G Y and Wang Z M 2021 Chin. Phys. B 30 120516
[5] Zhang X M, Zhuo Y, Luo Q, Wu Z H, Midya R, Wang Z R, Song W H, Wang R, Upadhyay N K, Fang Y L, Kiani F, Rao M Y, Yang Y, Xia Q F, Liu Q, Liu M and Yang J J 2020 Nat. Commun. 11 51
[6] Prezioso M, Mahmoodi M R, Bayat F M, Nili H, Kim H, Vincent A and Strukov D B 2018 Nat. Commun. 9 5311
[7] Panwar N, Rajendran B and Ganguly U 2017 IEEE Electron Device Lett. 38 740
[8] Lee D, Kwak M, Moon K, Choi W, Park J, Yoo J, Song J, Lim S, Sung C, Banerjee W and Hwang H 2019 Adv. Electron. Mater. 5 1800866
[9] Lashkare S, Chouhan S, Chavan T, Bhat A, Kumbhare P and Ganguly U 2018 IEEE Electron Device Lett. 39 484
[10] Tuma T, Pantazi A, Le Gallo M, Sebastian A and Eleftheriou E 2016 Nat. Nanotech. 11 693
[11] Dev D, Krishnaprasad A, Shawkat M S, He Z Z, Das S, Fan D L, Chung H S, Jung Y and Roy T 2020 IEEE Electron Device Lett. 41 936
[12] Chen Y H, Wang Y, Luo Y H, Liu X W, Wang Y Q, Gao F, Xu J G, Hu E T, Samanta S, Wan X, Lian X J, Xiao J and Tong Y 2019 IEEE Electron Device Lett. 40 1686
[13] Zhang X M, Wang W, Liu Q, Zhao X L, Wei J S, Cao R R, Yao Z H, Zhu X L, Zhang F, Lv H B, Long S B and Liu M 2018 IEEE Electron Device Lett. 39 308
[14] Lu Y F, Li Y, Li H Y, Wan T Q, Huang X D, He Y H and Miao X S 2020 IEEE Electron Device Lett. 41 1245
[15] Chen D and Huang S H 2016 Chin. Phys. B 25 117701
[16] Li Y J, Wu H Q, Gao B, Hua Q L, Zhang Z, Zhang W R and Qian H 2018 Chin. Phys. B 27 118502
[17] Li X B, Chen N K, Wang X P and Sun H B 2018 Adv. Funct. Mater. 28 1803380
[18] Cappelletti P, Annunziata R, Arnaud F, Disegni F, Maurelli A and Zuliani P 2020 J. Phys. D: Appl. Phys. 53 193002
[19] Dai Y, Wang H, Tao H L, Li W J, Li W M and Yang C L 2019 Physica E 114 113577
[20] Matsubara E, Okada S, Ichitsubo T, Kawaguchi T, Hirata A, Guan P F, Tokuda K, Tanimura K, Matsunaga T, Chen M W and Yamada N 2016 Phys. Rev. Lett. 117 135501
[21] Lv H B, Wan H J and Tang T A 2010 IEEE Electron Device Lett. 31 978
[22] Zhang Z Y, Wang Y Y, Wang G H, Mu J M, Ma M Y, He Y H, Yang R R and Li H L 2018 Sci. Rep. 8 12101
[23] Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet M V, Boddaert X, Calmes C and Muller C 2013 Solid State Electron. 79 159
[24] Huang Y H, Chen H A, Wu H H and Hsieh T E 2015 J. Appl. Phys. 117 014505
[25] Wang Q, Sun H J, Zhang J J, Xu X H and Miao X S 2012 J. Electron. Mater. 41 3417
[26] Xiao S X, Xie X D, Wen S P, Zeng Z G, Huang T W and Jiang J H 2018 Neurocomputing 272 677
[27] Bryja H, Grüner C, Gerlach J W, Behrens M, Ehrhardt M, Rauschenbach B and Lotnyk A 2020 J. Phys. D: Appl. Phys. 53 184002
[28] Lian X J, Shen X Y, Fu J K, Gao Z X, Wan X, Liu X Y, Hu E T, Xu J G and Tong Y 2020 Electronics 9 2098
[29] Lian X J, Shen X Y, Zhang M C, Xu J G, Gao F, Wan X, Hu E T, Guo Y F, Zhao J and Tong Y 2019 Appl. Phys. Lett. 115 063501
[30] Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[31] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[32] Blöchl P E 1994 Phys. Rev. B 50 17953
[33] Ji X L, Hao S, Pang K Y, Lim K G and Zhao R 2020 IEEE Electron Device Lett. 41 505
[34] Chen S C, Mahmoodi M R, Shi Y Y, Mahata C, Yuan B, Liang X H, Wen C, Hui F, Akinwande D J, Strukov D B and Lanza M 2020 Nat. Electron. 3 638
[35] Sokolov A, Ali M, Li H, Jeon Y R, Ko M J and Choi H H 2021 Adv. Electron. Mater. 7 2000866

[1]	Fabrication and investigation of ferroelectric memristors with various synaptic plasticities Qi Qin(秦琦), Miaocheng Zhang(张缪城), Suhao Yao(姚苏昊), Xingyu Chen(陈星宇), Aoze Han(韩翱泽),Ziyang Chen(陈子洋), Chenxi Ma(马晨曦), Min Wang(王敏), Xintong Chen(陈昕彤), Yu Wang(王宇),Qiangqiang Zhang(张强强), Xiaoyan Liu(刘晓燕), Ertao Hu(胡二涛), Lei Wang(王磊), and Yi Tong(童祎). Chin. Phys. B, 2022, 31(7): 078502.
[2]	Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry He Ao-Dong (何敖东), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Wang Liang-Yong (王良咏), Liu Wei-Li (刘卫丽), Feng Gao-Ming (冯高明), Feng Song-Lin (封松林). Chin. Phys. B, 2014, 23(8): 088502.
[3]	Thermal effect of Ge₂Sb₂Te₅ in phase change memory device Li Jun-Tao (李俊焘), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Ren Kun (任堃), Zhu Min (朱敏), Xu Jia (徐佳), Ren Jia-Dong (任佳栋), Feng Gao-Ming (冯高明), Ren Wan-Chun (任万春), Tong Hao (童浩). Chin. Phys. B, 2014, 23(8): 087804.
[4]	Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅ Yan Wei-Xia (闫未霞), Wang Liang-Yong (王良咏), Zhang Ze-Fang (张泽芳), Liu Wei-Li (刘卫丽), Song Zhi-Tang (宋志棠). Chin. Phys. B, 2014, 23(4): 048301.
[5]	Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry He Ao-Dong (何敖东), Song Zhi-Tang (宋志棠), Liu Bo (刘波), Zhong Min (钟旻), Wang Liang-Yong (王良咏), Lü Ye-Gang (吕业刚), Feng Song-Lin (封松林). Chin. Phys. B, 2013, 22(1): 018503.
[6]	Crystallization of Ge₂Sb₂Te₅ phase-change optical disk media Liu Bo (刘波), Ruan Hao (阮昊), Gan Fu-Xi (干福熹). Chin. Phys. B, 2002, 11(3): 293-297.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

Cite this article:

Online attention