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Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases |
| Tianyuan Song(宋天源)1, Dongli Zhang(张冬利)1,†, Mingxiang Wang(王明湘)1, and Qi Shan(单奇)2 |
1 School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China;
2 Visionox Technology Co., Ltd, Suzhou 215006, China |
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Abstract Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated, and the corresponding degradation mechanism is proposed and verified. The maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same time. Trapping of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying mechanism. The observed degradation phenomena, including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale, current crowding in the output curve, and smaller degradation in transfer curves measured under large drain bias, can all be well explained with the proposed degradation mechanism.
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Received: 05 January 2022
Revised: 11 April 2022
Accepted manuscript online: 14 April 2022
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PACS:
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81.05.Gc
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(Amorphous semiconductors)
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81.05.Ea
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(III-V semiconductors)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20201201), the Fund from Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the State Key Laboratory of ASIC and System, Fudan University, (Grant No. 2021KF005). |
Corresponding Authors:
Dongli Zhang
E-mail: dongli_zhang@suda.edu.cn
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Cite this article:
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇) Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases 2022 Chin. Phys. B 31 088101
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