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Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition |
| Jia-Jun Ma(马佳俊)1,2,†, Kang Wu(吴康)1,2,†, Zhen-Yu Wang(王振宇)2, Rui-Song Ma(马瑞松)1, Li-Hong Bao(鲍丽宏)1,2,4, Qing Dai(戴庆)3, Jin-Dong Ren(任金东)3,‡, and Hong-Jun Gao(高鸿钧)1,2,4,§ |
1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nano-technology, National Center for Nanoscience and Technology, Beijing 100190, China;
4 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China |
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Abstract We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS2 monolayer on the SiO2 substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO3 flakes on the mica substrate compared to MoO3 powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS2 monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO2 substrate and is essential to further development of the TMDs-related integrated devices.
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Received: 23 March 2022
Revised: 11 April 2022
Accepted manuscript online: 14 April 2022
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PACS:
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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07.79.Cz
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(Scanning tunneling microscopes)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61888102), the National Natural Science Foundation of China (Grant No. 12004417), the National Key Research and Development Program of China (Grant Nos. 2018YFA0305800 and 2019YFA0308500), the National Natural Science Foundation of China (Grant No. U2032206), Chinese Academy of Sciences (Grant Nos. XDB36000000, YSBR-003, and 112111KYSB20160061), Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant Nos. XDB30000000 and XDB28000000), Youth Innovation Promotion Association of CAS (Grant No. Y201902), and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003). |
Corresponding Authors:
Jin-Dong Ren, Hong-Jun Gao
E-mail: renjd@nanoctr.cn;hjgao@iphy.ac.cn
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Cite this article:
Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧) Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition 2022 Chin. Phys. B 31 088105
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