Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

doi:10.1088/1674-1056/ac657d

Abstract Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al₂O₃ substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

Keywords: ammonia borane dehydrogenation h-BN dual temperature zone

Received: 16 February 2022
Revised: 01 April 2022
Accepted manuscript online: 08 April 2022

PACS:	61.50.-f	(Structure of bulk crystals)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	71.20.Nr	(Semiconductor compounds)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61964001), the Key Research and Development Program of Jiangxi Province, China (Grant No. 20212BBG73012), the Natural Science Foundation of Jiangxi Province, China (Grant No. 20192BAB207033), the Key Scientific Research Projects of Henan Higher Education Institutions, China (Grant No. 22A490001), the State Key Laboratory of Particle Detection and Electronics, China (Grant No. SKLPDE-KF-2019), and the Foundation of Engineering Research Center of Nuclear Technology Application (East China Institute of Technology) (Grant No. HJSJYB2021-4).

Corresponding Authors: Ji-Jun Zou
E-mail: jjzou@ecit.cn

Cite this article:

Zhi-Fu Zhu(朱志甫), Shao-Tang Wang(王少堂), Ji-Jun Zou(邹继军), He Huang(黄河), Zhi-Jia Sun(孙志嘉), Qing-Lei Xiu(修青磊), Zhong-Ming Zhang(张忠铭), Xiu-Ping Yue(岳秀萍), Yang Zhang(张洋), Jin-Hui Qu(瞿金辉), and Yong Gan(甘勇) Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition 2022 Chin. Phys. B 31 086103

[1] Liu J, Lin L, Zhao Y, Zheng Y, An K, Wei J, Chen L, Hei L, Wang J, Feng Z and Li C 2018 Vacuum 155 391
[2] Lv R, Yang X, Yang D, Niu C, Zhao C, Qin J, Zang J, Dong F, Dong L and Shan C 2021 Chin. Phys. Lett. 38 076101
[3] Wu C, Soomro A M, Sun F, Wang H, Liu C, Yang X, Kang J and Cai D 2016 Phys. Status Solidi (b) 253 829
[4] Lindsay L and Broido D A 2011 Phys. Rev. B 84 155421
[5] Liu Z, Gong Y, Zhou W, Ma L, Yu J, Idrobo J C, Jung J, MacDonald A H, Vajtai R, Lou J and Ajayan P M 2013 Nat. Commun. 4 2541
[6] Ahmed K, Dahal R, Weltz A, Lu J Q, Danpn Y and Bhat I B 2016 Appl. Phys. Lett. 109 113501
[7] Wang L, Wu B, Chen J, Liu H, Hu P and Liu Y 2014 Adv. Mater. 26 1559
[8] Maity A, Doan T C, Li J, Lin J Y and Jiang H X 2016 Appl. Phys. Lett. 109 072101
[9] Song J, Duan S, Chen X, Li X, Yang B and Liu X 2020 Chin. Phys. Lett. 37 076203
[10] Li Y, Zhou Z X, Guan X M, Li S, Wang Y, Jia X P and Ma H A 2016 Chin. Phys. Lett. 33 028101
[11] Zhang D, Wu F, Ying Q, Gao X, Li N, Wang K, Yin Z, Cheng Y and Meng G 2019 J. Mater. Chem. C 7 1871
[12] Cho H, Park S, Won D I, Kang S O, Pyo S S, Kim D I, Kim S M, Kim H C and Kim M J 2015 Sci Rep. 5 11985
[13] Chen T A, Chuu C P, Tseng C, Wen C K, Philip Wong H S, Pan S, Li R, Chao T A, Chueh W C, Zhang Y, Fu Q, Yakobson B, Chang W H and Li L J 2020 Nature 579 219
[14] Kim G, Jang A R, Jeong H Y, Lee Z, Kang D J and Shin H S 2013 Nano Lett. 13 1834
[15] Behura S, Nguyen P, Che S, Debbarma R and Berry V 2015 J. Am. Chem. Soc. 137 13060
[16] Umehara N, Masuda A, Shimizu T, Kuwahara I, Kouno T, Kominami H and Hara K 2016 Jpn. J. Appl. Phys. 55 05FD09
[17] Maity A, Grenadier S J, Li J, Liu J Y and Jiang H X 2020 Appl. Phys. Lett. 116 142102
[18] Yamada H, Inotsume S, Kumagai N, Yamada T and Shimizu M 2020 Physica Status Solidi (b) 257 1900318
[19] Kumar A, Malik G, Pandey M K, Chandra R and Mulik R S 2021 Ceramics International 47 12537
[20] Li J S, Zhang C R, Li B, Cao F and Wang S Q 2011 Surf. Coat. Technol. 205 3736
[21] Song X, Li Q, Ji J, Yan Z, Gu Y, Huo C, Zou Y, Zhi C and Zeng H 2016 2D Mater. 3 035007
[22] Chen Y, Liang H, Xia X, Zhang H, Shi J, Abbas Q and Du G 2017 J. Mater. Sci.:Mater. Electron. 28 14341
[23] Gao Y, Ren W, Ma T, Liu Z, Zhang Y, Liu W, Ma L, Ma X and Chen H 2013 ACS Nano 7 5199
[24] Strakov H, Hackl G, Popovska N and Gerhard H 2004 Chem. Vap. Depos. 10 325

[1]	Extinction mechanisms of hyperbolic h-BN nanodisk Runkun Chen(陈闰堃), Jianing Chen(陈佳宁). Chin. Phys. B, 2020, 29(5): 057802.
[2]	Inducing opto-electronic and spintronic trends in bilayer h-BN through TMO₃ clusters incorporation: Ab-initio study Irfan Ahmed, Muhammad Rafique, Mukhtiar Ahmed Mahar, Abdul Sattar Larik, Mohsin Ali Tunio, Yong Shuai(帅永). Chin. Phys. B, 2019, 28(11): 116301.
[3]	Computational mechanistic investigation of radiation damage of adenine induced by hydroxyl radicals Rongri Tan(谈荣日), Huixuan Liu(刘慧宣), Damao Xun(寻大毛), Wenjun Zong(宗文军). Chin. Phys. B, 2018, 27(2): 027102.
[4]	Thermo-controllable self-assembled structures of single-layer 4, 4"-diamino-p-terphenyl molecules on Au (110) Junhai Ren(任俊海), Deliang Bao(包德亮), Li Dong(董立), Lei Gao(高蕾), Rongting Wu(武荣庭), Linghao Yan(闫凌昊), Aiwei Wang(王爱伟), Jiahao Yan(严佳浩), Yeliang Wang(王业亮), Shixuan Du(杜世萱), Qing Huan(郇庆), Hongjun Gao(高鸿钧). Chin. Phys. B, 2017, 26(8): 086801.
[5]	Damage mechanism of hydroxyl radicals toward adenine–thymine base pair Tan Rong-Ri (谈荣日), Wang Dong-Qi (王东琪), Zhang Feng-Shou (张丰收). Chin. Phys. B, 2014, 23(2): 027103.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Cite this article:

Online attention