Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

doi:10.1088/1674-1056/ac615b

Abstract The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO₂ interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.

Keywords: shield gate trench MOSFET repetitive unclamped inductive switching stress degradation static and dynamic parameters

Received: 03 December 2021
Revised: 04 March 2022
Accepted manuscript online: 28 March 2022

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61504049), Jiangsu Province Postdoctoral Science Foundation (Grant No. 2018K057B), and the Fundamental Research Funds for the Central Universities, China (Grant No. JUSRP51510).

Corresponding Authors: Linna Zhao, Xiaofeng Gu
E-mail: xgu@jiangnan.edu.cn;zhaolinna@jiangnan.edu.cn

Cite this article:

Chenkai Zhu(朱晨凯), Linna Zhao(赵琳娜), Zhuo Yang(杨卓), and Xiaofeng Gu(顾晓峰) Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress 2022 Chin. Phys. B 31 097303

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Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

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