| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn2As2 |
| Feihao Pan(潘斐豪), Congkuan Tian(田丛宽), Jiale Huang(黄嘉乐), Daye Xu(徐大业), Jinchen Wang (汪晋辰), Peng Cheng(程鹏)†, Juanjuan Liu(刘娟娟)‡, and Hongxia Zhang(张红霞)§ |
| Laboratory for Neutron Scattering and Beijing Key Laboratory of Optoelectronic Functional Materials and MicroNano Devices, Department of Physics, Renmin University of China, Beijing 100872, China |
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Abstract We report an investigation on the single crystal growth, magnetic and transport properties of EuIn2(As1-xPx)2 (0≤x≤ 1). The physical properties of axion insulator candidate EuIn2As2 can be effectively tuned by P-doping. With increasing x, the c-axis lattice parameter decreases linearly, the magnetic transition temperature gradually increases and ferromagnetic interactions are enhanced. This is similar to the previously reported high pressure effect on EuIn2As2. For x=0.40, a spin glass state at Tg=10 K emerges together with the observations of a butter-fly shaped magnetic hysteresis and slow magnetic behavior. Besides, magnetic transition has great influence on the charge carriers in this system and negative colossal magnetoresistance is observed for all P-doped samples. Our findings suggest that EuIn2(As1-xPx)2 is a promising material playground for exploring novel topological states.
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Received: 24 January 2022
Revised: 25 February 2022
Accepted manuscript online:
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PACS:
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75.50.Lk
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(Spin glasses and other random magnets)
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72.25.Rb
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(Spin relaxation and scattering)
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03.65.Vf
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(Phases: geometric; dynamic or topological)
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos.12074426,11227906 and U2030106),the Fundamental Research Funds for the Central Universities,the Research Funds of Renmin University of China (Grant No.20XNLG19). |
Corresponding Authors:
Peng Cheng,E-mail:pcheng@ruc.edu.cn;Juanjuan Liu,E-mail:juanjuanliu@ruc.edu.cn;Hongxia Zhang,E-mail:hxzhang@ruc.edu.cn
E-mail: pcheng@ruc.edu.cn;juanjuanliu@ruc.edu.cn;hxzhang@ruc.edu.cn
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| About author: 2022-3-14 |
Cite this article:
Feihao Pan(潘斐豪), Congkuan Tian(田丛宽), Jiale Huang(黄嘉乐), Daye Xu(徐大业), Jinchen Wang (汪晋辰), Peng Cheng(程鹏), Juanjuan Liu(刘娟娟), and Hongxia Zhang(张红霞) Effects of phosphorus doping on the physical properties of axion insulator candidate EuIn2As2 2022 Chin. Phys. B 31 057502
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