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Laser-induced phase conversion of n-type SnSe2 to p-type SnSe |
| Qi Zheng(郑琦)1,2,†, Rong Yang(杨蓉)1,2,4,†, Kang Wu(吴康)1,2, Xiao Lin(林晓)2,3, Shixuan Du(杜世萱)1,2,3,4, Chengmin Shen(申承民)1,2,3, Lihong Bao(鲍丽宏)1,2,3,4,‡, and Hong-Jun Gao(高鸿钧)1,2,3,4,§ |
1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract We report a facile phase conversion method that can locally convert n-type SnSe2 into p-type SnSe by direct laser irradiation. Raman spectra of SnSe2 flakes before and after laser irradiation confirm the phase conversion of SnSe2 to SnSe. By performing the laser irradiation on SnSe2 flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe2 and results in the phase conversion of SnSe2 to SnSe. Lattice-revolved transmission electron microscope images of SnSe2 flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe2 flakes, a pattern with SnSe2/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.
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Received: 25 October 2021
Revised: 06 January 2022
Accepted manuscript online: 07 January 2022
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PACS:
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73.63.Bd
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(Nanocrystalline materials)
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64.70.Nd
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(Structural transitions in nanoscale materials)
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42.55.Ye
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(Raman lasers)
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78.30.-j
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(Infrared and Raman spectra)
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| Fund: This work was supported by the National Key Research & Development Project of China (Grant Nos. 2016YFA0202300 and 2018FYA0305800), the National Natural Science Foundation of China (Grant No. 61888102), Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. Y201902). |
Corresponding Authors:
Lihong Bao, Hong-Jun Gao
E-mail: lhbao@iphy.ac.cn;hjgao@iphy.ac.cn
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Cite this article:
Qi Zheng(郑琦), Rong Yang(杨蓉), Kang Wu(吴康), Xiao Lin(林晓), Shixuan Du(杜世萱), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧) Laser-induced phase conversion of n-type SnSe2 to p-type SnSe 2022 Chin. Phys. B 31 047306
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