| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction |
| Qiu-Ling Qiu(丘秋凌)1, Shi-Xu Yang(杨世旭)2, Qian-Shu Wu(吴千树)1, Cheng-Lang Li(黎城朗)1, Qi Zhang(张琦)1, Jin-Wei Zhang(张津玮)1, Zhen-Xing Liu(刘振兴)1, Yuan-Tao Zhang(张源涛)2,†, and Yang Liu(刘扬)1,‡ |
1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 States Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China |
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Abstract The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.
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Received: 25 October 2021
Revised: 16 December 2021
Accepted manuscript online: 31 December 2021
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PACS:
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71.55.Eq
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(III-V semiconductors)
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71.23.An
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(Theories and models; localized states)
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| Fund: Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B010174003). |
Corresponding Authors:
Yuan-Tao Zhang, Yang Liu
E-mail: zhangyt@jlu.edu.cn;liuy69@mail.sysu.edu.cn
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Cite this article:
Qiu-Ling Qiu(丘秋凌), Shi-Xu Yang(杨世旭), Qian-Shu Wu(吴千树), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Jin-Wei Zhang(张津玮), Zhen-Xing Liu(刘振兴), Yuan-Tao Zhang(张源涛), and Yang Liu(刘扬) Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction 2022 Chin. Phys. B 31 047103
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