Combined effects of cycling endurance and total ionizing dose on floating gate memory cells

doi:10.1088/1674-1056/ac3d80

Abstract The combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, and the obtained results are listed below. (i) The programmed flash cells with a prior appropriate number of program and easing cycling stress exhibit much smaller threshold voltage shift than without those in response to radiation, which is ascribed mainly to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate. (ii) The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in the programmed state or erased state. (iii) Radiation is more likely to set up the interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.

Keywords: radiation floating gate threshold voltage recombination

Received: 09 October 2021
Revised: 22 November 2021
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	61.80.Ed	(γ-ray effects)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported financially by the National Natural Science Foundation of China (Grant No.62174150) and the Natural Science Foundation of Jiangsu Province,China (Grant No.BK20211040).

Corresponding Authors: Guo-Zhu Liu,E-mail:gzliucetc@163.com
E-mail: gzliucetc@163.com

About author: 2021-11-26

Cite this article:

Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟) Combined effects of cycling endurance and total ionizing dose on floating gate memory cells 2022 Chin. Phys. B 31 056107

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