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Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions |
| Jun-Yuan Yang(杨浚源)1, Zong-Kai Feng(冯棕楷)1, Ling Jiang(蒋领)1, Jie Song(宋杰)1, Xiao-Xun He(何晓珣)1, Li-Ming Chen(陈黎明)1, Qing Liao(廖庆)1, Jiao Wang(王姣)2, and Bing-Sheng Li(李炳生)1,† |
1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 Sichuan Vocational and Technical College of Communications, Chengdu 611130, China |
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Abstract Chemical disorder on the surface and lattice strain in GaN implanted by Fe10+ ions are investigated. In this study, 3-MeV Fe10+ ions fluence ranges from 1×1013 ions/cm2 to 5×1015 ions/cm2 at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.
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Received: 19 September 2021
Revised: 27 October 2021
Accepted manuscript online: 06 November 2021
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PACS:
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61.80.-x
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(Physical radiation effects, radiation damage)
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61.80.Jh
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(Ion radiation effects)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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78.30.Fs
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(III-V and II-VI semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12075194) and the Fund of Collage Student Innovation and Entrepreneurship Training Program (Grant No. S202010619053). We appreciate the staff in the 320-kV high-voltage platform in the Institute of Modern Physics, Chinese Academy of Sciences for their assistance in ion implantation experiment. |
Corresponding Authors:
Bing-Sheng Li
E-mail: libingshengmvp@163.com
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Cite this article:
Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生) Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions 2022 Chin. Phys. B 31 046103
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