| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor |
| Ji-Yao Du(都继瑶)1, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2,†, and Jin-Ping Ao(敖金平)2 |
1 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
2 Institute of Technology and Science, Tokushima University, Tokushima, Japan |
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Abstract Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor. The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas, excepting the series resistance. In the sub-threshold region, the contribution of series resistance on the sensitivity can be ignored due to the relatively small current. The sensitivity is dominated by the current density. A large anode area is helpful for enhancing the sensitivity at the same current level. In the fully turn-on region, the contribution of series resistance dominates the sensitivity. Unfortunately, a large series resistance degrades the temperature error and linearity, implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.
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Received: 03 June 2021
Revised: 14 October 2021
Accepted manuscript online: 22 October 2021
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PACS:
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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52.59.Mv
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(High-voltage diodes)
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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| Fund: This work was supported by the Scientific Research Support Foundation for Introduced High-Level Talents of Shenyang Ligong University (Grant No. 1010147000914) and the Science and Technology Program of Ningbo (Grant No. 2019B10129). |
Corresponding Authors:
Tao-Fei Pu
E-mail: fbc_ptf@126.com
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Cite this article:
Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平) Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor 2022 Chin. Phys. B 31 047701
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