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Chin. Phys. B, 2022, Vol. 31(3): 037102    DOI: 10.1088/1674-1056/ac3070

Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal

Yong Zhang(张勇)1,2, Xinliang Huang(黄新亮)2, Jinglei Zhang(张警蕾)2, Wenshuai Gao(高文帅)1,†, Xiangde Zhu(朱相德)2,‡, and Li Pi(皮雳)2
1 Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China;
2 Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
Abstract  The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions, and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V1-δSb2 single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of a weak antilocalization effect (WAL). In addition, based upon the experimental and theoretical band structure calculations, V1-δSb2 is a research candidate for a flat band.
Keywords:  binary pnictide semimetals      vanadium vacancy      flat band      weak anti-localization  
Received:  17 September 2021      Revised:  08 October 2021      Accepted manuscript online:  18 October 2021
PACS:  71.20.-b (Electron density of states and band structure of crystalline solids)  
  72.10.Fk (Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))  
  72.15.Rn (Localization effects (Anderson or weak localization))  
  72.15.-v (Electronic conduction in metals and alloys)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U2032214, U2032163, and 11904002), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017483), and the Natural Science Foundation of Anhui Province, China (Grant No. 1908085QA15).
Corresponding Authors:  Wenshuai Gao, Xiangde Zhu     E-mail:;

Cite this article: 

Yong Zhang(张勇), Xinliang Huang(黄新亮), Jinglei Zhang(张警蕾), Wenshuai Gao(高文帅), Xiangde Zhu(朱相德), and Li Pi(皮雳) Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal 2022 Chin. Phys. B 31 037102

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