Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

doi:10.1088/1674-1056/ac21ba

Abstract We investigate the influence of source and drain bias voltages (V_DS) on the quantum sub-band transport spectrum in the 10-nm width N-typed junctionless nanowire transistor at the low temperature of 6 K. We demonstrate that the transverse electric field introduced from V_DS has a minor influence on the threshold voltage of the device. The transverse electric field plays the role of amplifying the gate restriction effect of the channel. The one-dimensional (1D)-band dominated transport is demonstrated to be modulated by V_DS in the saturation region and the linear region, with the sub-band energy levels in the channel (E_channel) intersecting with Fermi levels of the source (E_fS) and the drain (E_fD) in turn as V_g increases. The turning points from the linear region to the saturation region shift to higher gate voltages with V_DS increase because the higher Fermi energy levels of the channel required to meet the situation of E_fD =E_channel. We also find that the bias electric field has the effect to accelerate the thermally activated electrons in the channel, equivalent to the effect of thermal temperature on the increase of electron energy. Our work provides a detailed description of the bias-modulated quantum electronic properties, which will give a more comprehensive understanding of transport behavior in nanoscale devices.

Keywords: junctionless nanowire transistors quantum transport spectrum source and drain voltage low-temperature conductance

Received: 07 July 2021
Revised: 09 August 2021
Accepted manuscript online: 27 August 2021

PACS:	77.55.df	(For silicon electronics)
	85.30.-z	(Semiconductor devices)
	05.60.Gg	(Quantum transport)
	61.46.Km	(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503).

Corresponding Authors: Wei-Hua Han, Fu-Hua Yang
E-mail: weihua@semi.ac.cn;fhyang@semi.ac.cn

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Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华) Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor 2022 Chin. Phys. B 31 017701

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[1]	Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华). Chin. Phys. B, 2019, 28(10): 107303.
[2]	Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华). Chin. Phys. B, 2015, 24(12): 128101.
[3]	Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华). Chin. Phys. B, 2014, 23(8): 088107.

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Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

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