Optically-controlled resistive switching effectsof CdS nanowire memtransistor

doi:10.1088/1674-1056/ac16ce

Abstract Since it was proposed, memtransistors have been a leading candidate with powerful capabilities in the field of neural morphological networks. A memtransistor is an emerging structure combining the concepts of a memristor and a field-effect transistor with low-dimensional materials, so that both optical excitation and electrical stimuli can be used to modulate the memristive characteristics, which make it a promising multi-terminal hybrid device for synaptic structures. In this paper, a single CdS nanowire memtransistor has been constructed by the micromechanical exfoliation and alignment lithography methods. It is found that the CdS memtransistor has good non-volatile bipolar memristive characteristics, and the corresponding switching ratio is as high as 10⁶ in the dark. While under illumination, the behavior of the CdS memtransistor is similar to that of a transistor or a memristor depending on the incident wavelengths, and the memristive switching ratio varies in the range of 10 to 10⁵ with the increase of the incident wavelength in the visible light range. In addition, the optical power is also found to affect the memristive characteristics of the device. All of these can be attributed to the modulation of the potential barrier by abundant surface states of nanowires and the illumination influences on the carrier concentrations in nanowires.

Keywords: CdS nanowire memtransistors optically-controlled resistive switching

Received: 19 May 2021
Revised: 16 July 2021
Accepted manuscript online: 22 July 2021

PACS:	61.46.Km	(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
	85.60.-q	(Optoelectronic devices)
	87.19.lv	(Learning and memory)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51702245) and the Fundamental Research Funds for the Central Universities, China (Grant No. WUT2020IB010).

Corresponding Authors: Feng-Xiang Chen, Li-Sheng Wang
E-mail: phonixchen79@whut.edu.cn;wang_lesson@whut.edu.cn

Cite this article:

Jia-Ning Liu(刘嘉宁), Feng-Xiang Chen(陈凤翔), Wen Deng(邓文), Xue-Ling Yu(余雪玲), and Li-Sheng Wang(汪礼胜) Optically-controlled resistive switching effectsof CdS nanowire memtransistor 2021 Chin. Phys. B 30 116105

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Optically-controlled resistive switching effectsof CdS nanowire memtransistor

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