| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure |
| Ge Tang (唐鸽)1, Ying-Jie Qin(覃英杰)2,†, Shi-Shi Xie(谢诗诗)2, and Meng-Hao Sun(孙梦豪)2 |
1 College of Science, Shaoyang University, Hunan 422004, China;
2 College of Science, Guilin University of Technology, Guilin 541004, China |
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Abstract We theoretically investigate the wave-vector filtering (WVF) effect for electrons in an antiparallel asymmetric double δ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic (FM) stripes on the top and the bottom of GaAs/AlxGa1-xAs heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional (2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias, which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.
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Received: 23 February 2021
Revised: 18 June 2021
Accepted manuscript online: 18 July 2021
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PACS:
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73.40.-c
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(Electronic transport in interface structures)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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73.40.Gk
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(Tunneling)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11864009). |
Corresponding Authors:
Ying-Jie Qin
E-mail: yijiqi20@126.com
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Cite this article:
Ge Tang (唐鸽), Ying-Jie Qin(覃英杰), Shi-Shi Xie(谢诗诗), and Meng-Hao Sun(孙梦豪) Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure 2021 Chin. Phys. B 30 107303
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