Radiation effects of 50-MeV protons on PNP bipolar junction transistors

doi:10.1088/1674-1056/ac1331

Abstract The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.

Keywords: bipolar junction transistors electrical properties radiation defects synergistic effect

Received: 01 March 2021
Revised: 29 June 2021
Accepted manuscript online: 12 July 2021

PACS:	85.30.Pq	(Bipolar transistors)
	51.50.+v	(Electrical properties)
	61.80.-x	(Physical radiation effects, radiation damage)
	81.40.Wx	(Radiation treatment)

Fund: Project supported by No. TZ2018004.

Corresponding Authors: Xing-Ji Li
E-mail: lxj0218@hit.edu.cn

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Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀) Radiation effects of 50-MeV protons on PNP bipolar junction transistors 2022 Chin. Phys. B 31 028502

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Radiation effects of 50-MeV protons on PNP bipolar junction transistors

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