Please wait a minute...
Chin. Phys. B, 2021, Vol. 30(10): 107702    DOI: 10.1088/1674-1056/ac0dad
Special Issue: SPECIAL TOPIC — Ion beam modification of materials and applications
SPECIAL TOPIC—Ion beam modification of materials and applications Prev   Next  

Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films

Yu Zhao(赵瑜)1,2,3,†, Wen-Yue Zhao(赵文悦)2, Dan-Dan Ju(琚丹丹)1,3, Yue-Yue Yao(姚月月)2, Hao Wang(王豪)1,3, Cheng-Yue Sun(孙承月)1,3, Ya-Zhou Peng(彭亚洲)2, Yi-Yong Wu(吴宜勇)1,2,3,‡, and Wei-Dong Fei(费维栋)2,3,4,§
1 Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, Harbin 150001, China;
2 School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
3 National Defense Science and Technology Key Laboratory for Space Materials Behavior and Evaluation, Harbin 150001, China;
4 State Kay Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
Abstract  Lead zirconate titanate piezoelectric ceramics have important applications in space and aerospace technology, but the effect and physical mechanism of charged particle radiation on their performance yet to be clarified. In this study, we characterized PbZr0.52Ti0.48O3 (PZT) thin films, and changes in the ferroelectric properties of the films before and after electron and proton irradiation were investigated. The natural and heat treatment recoverability of the ferroelectric properties were studied, and the damages and mechanisms of different types of radiation in PZT films were also investigated. The results show that, in addition to ionization damages, electron irradiation causes certain structural damage on the PZT film, and the large structural damage caused by proton irradiation reduces drastically the ferroelectricity of the PZT film.
Keywords:  proton irradiation      electron irradiation      ferroelectricity  
Received:  21 March 2021      Revised:  11 June 2021      Accepted manuscript online:  23 June 2021
PACS:  77.55.hj (PZT)  
  77.80.Dj (Domain structure; hysteresis)  
  61.80.Jh (Ion radiation effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51802056), the Science Foundation of the National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, and the Key Laboratory of Micro-systems and Micro-structures Manufacturing (Harbin Institute of Technology), Ministry of Education, China.
Corresponding Authors:  Yu Zhao, Yi-Yong Wu, Wei-Dong Fei     E-mail:  yuzhao@hit.edu.cn;wuyiyong@hit.edu.cn;wdfei@hit.edu.cn

Cite this article: 

Yu Zhao(赵瑜), Wen-Yue Zhao(赵文悦), Dan-Dan Ju(琚丹丹), Yue-Yue Yao(姚月月), Hao Wang(王豪), Cheng-Yue Sun(孙承月), Ya-Zhou Peng(彭亚洲), Yi-Yong Wu(吴宜勇), and Wei-Dong Fei(费维栋) Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films 2021 Chin. Phys. B 30 107702

[1] Hu T and Kan E J 2018 Acta Phys. Sin. 67 221 (in Chinese)
[2] Zhai Y H 2013 Studies on Key Technologies of High Reliable Ferroelectric Memory Based on PZT Ferroelectric Film, Ph. D. Dissertation (Chengdu: University of Electronic Science and Technology of China)
[3] Zhou L D, Sun Y W and Meng Z C 2017 Aerodynamic Missile Journal 07 65
[4] Tian J T 2020 Chin. Phys. B 30 026102
[5] Lou L F, Yang Y T, Chai C C, Gao F and Tang C L 2007 High Power Laser and Particle Beams 19 2091
[6] Coic Y M, Musseau O and Leray J L 1994 IEEE Trans. Nuclear Sci. 41 495
[7] Yang S A, Kim B H, Lee M K, Lee G J, Lee N H and Bu S D 2014 Thin Solid Films 562 185
[8] Gao J X, Zheng L R, Huang B P, Song Z T, Yang L X, Fan Y J, Zhu D Z and Lin C L 1999 Semicond. Sci. Technol. 14 836
[9] Chen P X 2005 Radiation effects on semiconductor devices and integrated circuits (Beijing: National Defense Industry Press)
[10] Schwank J R, Nasby R D, Miller S L, Rodgers M S and Dressendorfer P V 1990 IEEE Trans. Nucl. Sci. 37 1703
[11] Barala S S, Banerjee N and Kumar M 2016 J. Electron. Mater. 45 4122
[12] Wu H P 2009 Study of Mechanical Properties of Polyscrystalline Ferroelectric Film with Preferred Orientation, Ph. D. Dissertation (Harbin: Harbin Institute of Technology)
[13] Thielsch R, Hassler W and Bruckner W 1996 Phys. Status Solidi A 156 199
[1] Ferroelectricity induced by the absorption of water molecules on double helix SnIP
Dan Liu(刘聃), Ran Wei(魏冉), Lin Han(韩琳), Chen Zhu(朱琛), and Shuai Dong(董帅). Chin. Phys. B, 2023, 32(3): 037701.
[2] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[3] Evolution of optical properties and molecular structure of PCBM films under proton irradiation
Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2022, 31(5): 057102.
[4] A comparative study on radiation reliability of composite channel InP high electron mobility transistors
Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智). Chin. Phys. B, 2021, 30(7): 070702.
[5] Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation
Jin-Jin Tang(汤金金), Gui-Peng Liu(刘贵鹏), Jia-Yu Song(宋家毓), Gui-Juan Zhao(赵桂娟), and Jian-Hong Yang(杨建红). Chin. Phys. B, 2021, 30(2): 027303.
[6] Intrinsic two-dimensional multiferroicity in CrNCl2 monolayer
Wei Shen(沈威), Yuanhui Pan(潘远辉), Shengnan Shen(申胜男), Hui Li(李辉), Siyuan Nie(聂思媛), and Jie Mei(梅杰). Chin. Phys. B, 2021, 30(11): 117503.
[7] Effects of Ni substitution on multiferroic properties in Bi5FeTi3O15 ceramics
Hui Sun(孙慧), Jiaying Niu(钮佳颖), Haiying Cheng(成海英), Yuxi Lu(卢玉溪), Zirou Xu(徐紫柔), Lei Zhang(张磊), and Xiaobing Chen(陈小兵). Chin. Phys. B, 2021, 30(10): 107701.
[8] Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯). Chin. Phys. B, 2020, 29(9): 097301.
[9] Topology and ferroelectricity in group-V monolayers
Mutee Ur Rehman, Chenqiang Hua(华陈强), Yunhao Lu(陆赟豪). Chin. Phys. B, 2020, 29(5): 057304.
[10] Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
Ying-Hui Zhong(钟英辉), Bo Yang(杨博), Ming-Ming Chang(常明铭), Peng Ding(丁芃), Liu-Hong Ma(马刘红), Meng-Ke Li(李梦珂), Zhi-Yong Duan(段智勇), Jie Yang(杨洁), Zhi Jin(金智), Zhi-Chao Wei(魏志超). Chin. Phys. B, 2020, 29(3): 038502.
[11] Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞). Chin. Phys. B, 2019, 28(7): 076106.
[12] Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
Shu-Xiang Sun(孙树祥), Zhi-Chao Wei(魏志超), Peng-Hui Xia(夏鹏辉), Wen-Bin Wang(王文斌), Zhi-Yong Duan(段智勇), Yu-Xiao Li(李玉晓), Ying-Hui Zhong(钟英辉), Peng Ding(丁芃), Zhi Jin(金智). Chin. Phys. B, 2018, 27(2): 028502.
[13] A synthetic semi-empirical physical model of secondary electron yield of metals under E-beam irradiation
Guo-Bao Feng(封国宝), Wan-Zhao Cui(崔万照), Na Zhang(张娜), Meng Cao(曹猛), Chun-Liang Liu(刘纯亮). Chin. Phys. B, 2017, 26(9): 097901.
[14] Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
Bing Ye(叶兵), Jie Liu(刘杰), Tie-Shan Wang(王铁山), Tian-Qi Liu(刘天奇), Jie Luo(罗捷), Bin Wang(王斌), Ya-Nan Yin(殷亚楠), Qing-Gang Ji(姬庆刚), Pei-Pei Hu(胡培培), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东). Chin. Phys. B, 2017, 26(8): 088501.
[15] Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se2 thin-film solar cells
Ming Lu(鲁明), Jing Xu(徐晶), Jian-Wei Huang(黄建微). Chin. Phys. B, 2016, 25(9): 098402.
No Suggested Reading articles found!