Modeling of high permittivity insulator structure with interface charge by charge compensation

doi:10.1088/1674-1056/ac0cd3

Abstract An analytical model of the power metal-oxide-semiconductor field-effect transistor (MOSFET) with high permittivity insulator structure (HKMOS) with interface charge is established based on superposition and developed for optimization by charge compensation. In light of charge compensation, the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage (BV) and minimizing specific ON-resistance (R_on,sp). From this optimization method, it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_on,sp-BV trade-off for quick design. The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region, the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and R_on,sp with JFET effect taken into account.

Keywords: charge compensation breakdown voltage high permittivity interface charge super-junction

Received: 23 April 2021
Revised: 15 June 2021
Accepted manuscript online: 21 June 2021

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	51.50.+v	(Electrical properties)

Corresponding Authors: Zhi-Gang Wang
E-mail: zhigangwang@swjtu.edu.cn

Cite this article:

Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮) Modeling of high permittivity insulator structure with interface charge by charge compensation 2022 Chin. Phys. B 31 028501

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