Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

doi:10.1088/1674-1056/ac0817

Abstract Temperature-dependent and driving current-dependent electroluminescence spectra of two different InGaN/GaN multiple quantum well structures SA and SB are investigated, with the In composition in each well layer (WL) along the growth direction progressively increasing for SA and progressively decreasing for SB. The results show that SB exhibits an improved efficiency droop compared with SA. This phenomenon can be explained as follows: owing to the difference in growth pattern of the WL between these two samples, the terminal region of the WL in SB contains fewer In atoms than in SA, and therefore the former undergoes less In volatilization than the latter during the waiting period required for warming-up due to the difference in the growth temperature between well and barrier layers. This results in SB having a deeper triangular-shaped potential well in its WL than SA, which strongly confines the carriers to the initial region of the WL to prevent them from leaking to the p-GaN side, thus improving the efficiency droop. Moreover, the improvement in the efficiency droop for SB is also partly attributed to its stronger Coulomb screening effect and carrier localization effect.

Keywords: InGaN/GaN asymmetric triangular multiple quantum wells structural and electroluminescence properties efficiency droop

Received: 08 April 2021
Revised: 21 May 2021
Accepted manuscript online: 04 June 2021

PACS:	78.66.Fd	(III-V semiconductors)
	78.67.De	(Quantum wells)
	78.60.Fi	(Electroluminescence)
	42.60.Lh	(Efficiency, stability, gain, and other operational parameters)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51872167 and 51672163) and the Major Science and Technology Innovation Project of Shandong Province, China (Grant No. 2019JZZY010210).

Corresponding Authors: Zi-Wu Ji
E-mail: jiziwu@sdu.edu.cn

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Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer 2022 Chin. Phys. B 31 017801

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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

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