Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films

doi:10.1088/1674-1056/ac078e

Abstract High-quality Fe-doped TiO₂ films are epitaxially grown on MgF₂ substrates by pulsed laser deposition. The x-ray diffraction and Raman spectra prove that they are of pure rutile phase. High-resolution transmission electron microscopy (TEM) further demonstrates that the epitaxial relationship between rutile-phased TiO₂ and MgF₂ substrates is 110 TiO₂₂. The room temperature ferromagnetism is detected by alternative gradient magnetometer. By increasing the ambient oxygen pressure, magnetization shows that it decreases monotonically while absorption edge shows a red shift. The transport property measurement demonstrates a strong correlation between magnetization and carrier concentration. The influence of ambient oxygen pressure on magnetization can be well explained by a modified bound magnetization polarization model.

Keywords: ferromagnetic materials semiconductors epitaxial films rutile TiO₂

Received: 20 February 2021
Revised: 24 March 2021
Accepted manuscript online: 03 June 2021

PACS:	77.80.Dj	(Domain structure; hysteresis)
	78.40.Fy	(Semiconductors)
	77.55.Px	(Epitaxial and superlattice films)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11504192) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR201910230017 and BSB2014010).

Corresponding Authors: Qiang Li, Qing-Hao Li
E-mail: liqiang@qdu.edu.cn;qhli@qdu.edu.cn

Cite this article:

Qing-Tao Xia(夏清涛), Zhao-Hui Li(李召辉), Le-Qing Zhang(张乐清), Feng-Ling Zhang(张凤玲), Xiang-Kun Li(李祥琨), Heng-Jun Liu(刘恒均), Fang-Chao Gu(顾方超), Tao Zhang(张涛), Qiang Li(李强), and Qing-Hao Li(李庆浩) Oxygen vacancy control of electrical, optical, and magnetic properties of Fe_0.05Ti_0.95O₂ epitaxial films 2021 Chin. Phys. B 30 117701

[1] Dietl T 2010 Nat. Mater. 9 965
[2] Prellier W, Fouchet A and Mercey B 2003 J. Phys.: Condes. Matter. 15 R1583
[3] Ando K 2006 Science 312 1883
[4] Li Q, Qiao R, Mehta A, Lü W, Zhou T, Arenholz E, Wang C, Chen Y, Li L, Tian Y, Bai L, Hussain Z, Zheng R, Yang W and Yan S 2020 Sci. Bull. 65 1718
[5] Zhang F, Zheng B, Sebastian A, Olson D H, Liu M, Fujisawa K, Pham Y T H, Jimenez V O, Kalappattil V, Miao L, Zhang T, Pendurthi R, Lei Y, Elías A L, Wang Y, Alem N, Hopkins P E, Das S, Crespi V H, Phan M H and Terrones M 2020 Adv. Sci. 7 2001174
[6] Phan V N and Nguyen H N 2020 Phys. Rev. B 102 125202
[7] Cai Y X, Zhang Y D, Dang B S, Wu H, Wang J F and Yuan P 2011 Acta Phys. Sin. 60 040701 (in Chinese)
[8] Paul S, Dalal B, Das M, Mandal P and De S K 2019 Chem. Mater. 31 8191
[9] Li Q, Shen T T, Dai Z K, Cao Y L, Yan S S, Kang S S, Dai Y Y, Chen Y X, Liu G L and Mei L M 2012 Appl. Phys. Lett. 101 172405
[10] Li X L and Xu X H 2019 Chin. Phys. B 28 098506
[11] Wei Z M and Xia J B. 2019 Acta Phys. Sin. 68 163201 (in Chinese)
[12] Jean-Baptiste M 2013 J. Phys. D: Appl. Phys. 46 143001
[13] Zhang K, Cao Y L, Fang Y W, Li Q, Zhang J, Duan C G, Yan S S, Tian Y F, Huang R, Zheng R K, Kang S S, Chen Y X, Liu G L and Mei L M 2015 Nanoscale 7 6334
[14] Song C, Cui B, Li F, Zhou X and Pan F 2017 Prog. Mater. Sci. 87 33
[15] Pham Y T H, Liu M, Jimenez V O, Yu Z, Kalappattil V, Zhang F, Wang K, Williams T, Terrones M and Phan M H 2020 Adv. Mater. 32 2003607
[16] You J Y, Gu B, Maekawa S and Su G 2020 Phys. Rev. B 102 094432
[17] Luo X, Zhang F, Li Q, Xia Q, Li Z, Li X, Ye W, Li S and Ge C 2020 J. Phys.: Condes. Matter. 32 334001
[18] Guo S L and Ning F L 2018 Chin. Phys. B 27 097502
[19] Long L, Yi P G, Chao Z H, Tao H L, Huang J T, Yu W Y, Chen R X, Lou M S and Yan L B 2020 Chin. Phys. B 29 097102
[20] He M, Tian Y F, Springer D, Putra I A, Xing G Z, Chia E E M, Cheong S A and Wu T 2011 Appl. Phys. Lett. 99 222511
[21] Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y and Liu C P 2006 Appl. Phys. Lett. 88 242507
[22] Kim H, Osofsky M, Miller M M, Qadri S B, Auyeung R C Y and Piqué A 2012 Appl. Phys. Lett. 100 032404
[23] Liu G L, Cao Q, Deng J X, Xing P F, Tian Y F, Chen Y X, Yan S S and Mei L M 2007 Appl. Phys. Lett. 90 052504
[24] Tian Y, Li Y, He M, Putra I A, Peng H, Yao B, Cheong S A and Wu T 2011 Appl. Phys. Lett. 98 162503
[25] Xing P F, Chen Y X, Yan S S, Liu G L, Mei L M, Wang K, Han X D and Zhang Z 2008 Appl. Phys. Lett. 92 022513
[26] de Godoy M P F, Mesquita A, Avansi W, Neves P P, Chitta V A, Ferraz W B, Boselli M A, Sabioni A C S and de Carvalho H B 2013 J. Alloys Compd. 555 315
[27] Kaushik A, Dalela B, Kumar S, Alvi P A and Dalela S 2013 J. Alloys Compd. 552 274
[28] Philip J, Punnoose A, Kim B I, Reddy K M, Layne S, Holmes J O, Satpati B, LeClair P R, Santos T S and Moodera J S 2006 Nat. Mater. 5 298
[29] Zhou T, Wei L, Xie Y, Li Q, Hu G, Chen Y, Yan S, Liu G, Mei L and Jiao J 2012 Nanoscale Res. Lett. 7 1
[30] Zhu D, Liu G, Xiao S, Yan S, He S, Cai L, Li Q, Cao Q, Hu S, Chen Y, Kang S and Mei L 2013 J. Appl. Phys. 113 173701
[31] Han R L and Yan Y 2018 Chin. Phys. B 27 117505
[32] Xiao L L and Xiao H X. 2019 Chin. Phys B 28 098506
[33] Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[34] Matsumoto Y, Murakami M, Shono T, Hasegawa T, Fukumura T, Kawasaki M, Ahmet P, Chikyow T, Koshihara S Y and Koinuma H 2001 Science 291 854
[35] Yamada Y, Ueno K, Fukumura T, Yuan H T, Shimotani H, Iwasa Y, Gu L, Tsukimoto S, Ikuhara Y and Kawasaki M 2011 Science 332 1065
[36] Li Q, Wei L, Xie Y, Jiang F, Zhou T, Hu G, Jiao J, Chen Y, Liu G, Yan S and Mei L 2013 J. Alloys Compd. 574 67
[37] Xu N N, Li G P, Lin Q L, Liu H and Bao L M 2016 Chin. Phys. B 25 116103
[38] Lee Y J, Jong M P D, Wiel W G V D, Kim Y and Brock J D 2010 Appl. Phys. Lett. 97 212506
[39] Singhal R K, Samariya A, Kumar S, Xing Y T, Jain D C, Dolia S N, Deshpande U P, Shripathi T and Saitovitch E B 2010 J. Appl. Phys. 107 113916
[40] Zhang Y, Qi Y Y, Hu Y H and Liang P 2013 Chin. Phys. B 22 127101
[41] Nguyen H H, Prellier W, Sakai J and Ruyter A 2004 J. Appl. Phys. 95
[42] Schuisky M, HRsta A, Aidla A, Kukli K, Kiisler A A and Aarik J 2000 J. Electrochem. Soc. 147 3319
[43] Chen M C and Jiang A Q. 2011 Chin. Phys. Lett. 28 077701
[44] Xie Y, Wei L, Li Q, Chen Y, Yan S, Jiao J, Liu G and Mei L 2016 J. Alloys Compd. 683 439
[45] Aita C R 2007 Appl. Phys. Lett. 90 213112
[46] Chen C A, Huang Y S, Chung W H, Tsai D S and Tiong K K 2009 J. Mater. Sci.: Mater. Electron. 20 303
[47] Yang J Y, Ma H L, Ma G H, Lu B and Ma H 2007 Appl. Phys. A 88 801
[48] Gupta R K, Ghosh K and Kahol P K 2010 Mater. Lett. 64 2022
[49] Shinde V R, Gujar T P, Lokhande C D, Mane R S and Han S H 2006 Mater. Chem. Phys. 96 326
[50] Singh J, Sharma S, Sharma S and Singh R C 2019 Optik 182 538
[51] Mayabadi A H, Waman V S, Kamble M M, Ghosh S S, Gabhale B B, Rondiya S R, Rokade A V, Khadtare S S, Sathe V G, Pathan H M, Gosavi S W and Jadkar S R 2014 J. Phys. Chem. Solids 75 182
[52] Tantray F A, Agrawal A, Gupta M, Andrews J T and Sen P 2016 Thin Solid Films 619 86
[53] Horprathum M, Eiamchai P, Chindaudom P, Pokaipisit A and Limsuwan P 2012 Procedia Engineering 32 676
[54] Kaminski A and Das Sarma S 2002 Phys. Rev. Lett. 88 247202
[55] Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nat. Mater. 4 173
[56] Deepika, Kumar R, Kumar R, Yadav K P, Vaibhav P, Sharma S, Singh R K and Kumar S 2020 Chin. Phys. B 29 108503
[57] Chou H, Lin C P, Huang J C A and Hsu H S 2008 Phys. Rev. B 77 245210

[1]	Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg₃Si₂Te₆ Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛). Chin. Phys. B, 2023, 32(3): 037802.
[2]	Atomic and electronic structures of p-type dopants in 4H-SiC Lingyan Lu(卢玲燕), Han Zhang(张涵), Xiaowei Wu(吴晓维), Jing Shi(石晶), and Yi-Yang Sun(孙宜阳). Chin. Phys. B, 2021, 30(9): 096806.
[3]	Water and nutrient recovery from urine: A lead up trail using nano-structured In₂S₃ photo electrodes R Jayakrishnan, T R Sreerev, and Adith Varma. Chin. Phys. B, 2021, 30(5): 056103.
[4]	First-principles investigation of the valley and electrical properties of carbon-doped α-graphyne-like BN sheet Bo Chen(陈波), Xiang-Qian Li(李向前), Lin Xue(薛林), Yan Han(韩燕), Zhi Yang(杨致), and Long-Long Zhang(张龙龙). Chin. Phys. B, 2021, 30(5): 057101.
[5]	Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青). Chin. Phys. B, 2021, 30(5): 058102.
[6]	First-principles study of the co-effect of carbon doping and oxygen vacancies in ZnO photocatalyst Jia Shi(史佳), Lei Wang(王蕾), and Qiang Gu(顾强). Chin. Phys. B, 2021, 30(2): 026301.
[7]	Ab-initio calculations of bandgap tuning of In_1-xGa_xY (Y = N, P) alloys for optoelectronic applications Muhammad Rashid, Jamil M, Mahmood Q, Shahid M Ramay, Asif Mahmood A, and Ghaithan H M. Chin. Phys. B, 2021, 30(11): 116301.
[8]	First-principles study of magnetism of 3d transition metals and nitrogen co-doped monolayer MoS₂ Long Lin(林龙), Yi-Peng Guo(郭义鹏), Chao-Zheng He(何朝政), Hua-Long Tao(陶华龙), Jing-Tao Huang(黄敬涛), Wei-Yang Yu(余伟阳), Rui-Xin Chen(陈瑞欣), Meng-Si Lou(娄梦思), Long-Bin Yan(闫龙斌). Chin. Phys. B, 2020, 29(9): 097102.
[9]	Fundamental band gap and alignment of two-dimensional semiconductors explored by machine learning Zhen Zhu(朱震), Baojuan Dong(董宝娟), Huaihong Guo(郭怀红), Teng Yang(杨腾), Zhidong Zhang(张志东). Chin. Phys. B, 2020, 29(4): 046101.
[10]	Defect induced room-temperature ferromagnetism and enhanced photocatalytic activity in Ni-doped ZnO synthesized by electrodeposition Deepika, Raju Kumar, Ritesh Kumar, Kamdeo Prasad Yadav, Pratyush Vaibhav, Seema Sharma, Rakesh Kumar Singh, and Santosh Kumar†. Chin. Phys. B, 2020, 29(10): 108503.
[11]	Homogeneous and inhomogeneous magnetic oxide semiconductors Xiao-Li Li(李小丽), Xiao-Hong Xu(许小红). Chin. Phys. B, 2019, 28(9): 098506.
[12]	First-principles study of the band gap tuning and doping control in CdSe_xTe_1-x alloy for high efficiency solar cell Jingxiu Yang(杨竞秀), Su-Huai Wei(魏苏淮). Chin. Phys. B, 2019, 28(8): 086106.
[13]	Polarized red, green, and blue light emitting diodes fabricated with identical device configuration using rubbed PEDOT:PSS as alignment layer Haoran Zhang(张皓然), Qi Zhang(张琪), Qian Zhang(张茜), Huizhi Sun(孙汇智), Gang Hai(海港), Jing Tong(仝静), Haowen Xu(徐浩文), Ruidong Xia(夏瑞东). Chin. Phys. B, 2019, 28(7): 078108.
[14]	Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors Shengli Guo(郭胜利), Fanlong Ning(宁凡龙). Chin. Phys. B, 2018, 27(9): 097502.
[15]	420 nm thick CH₃NH₃PbI_3-xBr_x capping layers for efficient TiO₂ nanorod array perovskite solar cells Long Li(李龙), Cheng-Wu Shi(史成武), Xin-Lian Deng(邓新莲), Yan-Qing Wang(王艳青), Guan-Nan Xiao(肖冠南), Ling-Ling Ni(倪玲玲). Chin. Phys. B, 2018, 27(1): 018804.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films

Cite this article:

Online attention

Oxygen vacancy control of electrical, optical, and magnetic properties of Fe_0.05Ti_0.95O₂ epitaxial films