Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors

doi:10.1088/1674-1056/abf644

Abstract The effects of dry O₂ post oxidation annealing (POA) at different temperatures on SiC/SiO₂ stacks are comparatively studied in this paper. The results show interface trap density (D_it) of SiC/SiO₂ stacks, leakage current density (J_g), and time-dependent dielectric breakdown (TDDB) characteristics of the oxide, are affected by POA temperature and are closely correlated. Specifically, D_it, J_g, and inverse median lifetime of TDDB have the same trend against POA temperature, which is instructive for SiC/SiO₂ interface quality improvement. Moreover, area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

Keywords: SiC O₂ post oxidation annealing interface traps MOS

Received: 19 February 2021
Revised: 01 April 2021
Accepted manuscript online: 09 April 2021

PACS:	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the General Program of the National Natural Science Foundation of China (Grant No. 61974159) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences and Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20200039).

Corresponding Authors: Sheng-Kai Wang, Yun Bai
E-mail: wangshengkai@ime.ac.cn;baiyun@ime.ac.cn

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Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇) Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors 2021 Chin. Phys. B 30 077303

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Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors

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Impact of O₂ post oxidation annealing on the reliability of SiC/SiO₂ MOS capacitors