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Chin. Phys. B, 2021, Vol. 30(8): 086104    DOI: 10.1088/1674-1056/abf640
Special Issue: SPECIAL TOPIC — Ion beam modification of materials and applications
SPECIAL TOPIC—Ion beam modification of materials and applications Prev   Next  

Mechanism of defect evolution in H+ and He+ implanted InP

Ren-Jie Liu(刘仁杰)1,2,†, Jia-Jie Lin(林家杰)3,4,†‡, N Daghbouj5, Jia-Liang Sun(孙嘉良)3,6, Tian-Gui You(游天桂)3,§, Peng Gao(高鹏)7, Nie-Feng Sun(孙聂枫)4,8, and Min Liao(廖敏)1,2
1 Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
4 China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China;
5 Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16000 Prague 6, Czechia;
6 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
7 Science and Technology on Power Sources Laboratory, Tianjin Institute of Power Sources, Tianjin 300384, China;
8 The 13 th Research Institute, CETC, Shijiazhuang 050051, China
Abstract  The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.
Keywords:  ion implantation      defect evolution      ion-slicing      damaged band  
Received:  26 January 2021      Revised:  10 March 2021      Accepted manuscript online:  09 April 2021
PACS:  61.72.-y (Defects and impurities in crystals; microstructure)  
  61.72.Cc (Kinetics of defect formation and annealing)  
  61.80.Jh (Ion radiation effects)  
  61.82.Fk (Semiconductors)  
Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFE0131300), the National Natural Science Foundation of China (Grant Nos. 61874128, 61851406, and 11705262), Frontier Science Key Program of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LY-JSC009), Chinese-Austrian Cooperative R&D Project (Grant No. GJHZ201950), Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).
Corresponding Authors:  Jia-Jie Lin, Tian-Gui You     E-mail:  jjlin@mail.sim.ac.cn;t.you@mail.sim.ac.cn

Cite this article: 

Ren-Jie Liu(刘仁杰), Jia-Jie Lin(林家杰), N Daghbouj, Jia-Liang Sun(孙嘉良), Tian-Gui You(游天桂), Peng Gao(高鹏), Nie-Feng Sun(孙聂枫), and Min Liao(廖敏) Mechanism of defect evolution in H+ and He+ implanted InP 2021 Chin. Phys. B 30 086104

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