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In-plane oriented CH3NH3PbI3 nanowire suppression of the interface electron transfer to PCBM |
| Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟)†, and Xiao-Hui Zhao(赵晓辉)‡ |
| Hebei Key Laboratory of Optic-Electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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Abstract One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research, we carried out a detailed study on electron transfer process at the interface of nanowire CH3NH3PbI3(N-MAPbI3)/Phenyl C61 butyric acid methyl-ester synonym (PCBM), as well as the interface of compact CH3NH3PbI3(C-MAPbI3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI3, N-MAPbI3/PCBM, C-MAPbI3, and C-MAPbI3/PCBM from picosecond (ps) to hundred nanosecond (ns) time scale, it is demonstrated that electron transfer at N-MAPbI3/PCBM interface is less efficient than that at C-MAPbI3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0×1018 cm-3-4.0×1018 cm-3. Hot electron transfer, which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0×1018 cm-3-2.2×1018 cm-3.
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Received: 01 January 2021
Revised: 22 March 2021
Accepted manuscript online: 06 April 2021
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PACS:
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68.35.bj
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(Amorphous semiconductors, glasses)
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68.55.ag
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(Semiconductors)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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| Fund: Projected supported by the National Natural Science Foundation of China (Grant Nos. 21503066 and 61904048), the Fundamental Research Project from Shenzhen Science and Technology Innovation Committee (Grant No. JCYJ20180302174021198), the Natural Science Foundation of Hebei Province, China (Grant No. F2017201136), and the Foundation of Hebei Educational Committee (Grant No. ZC2016003). |
Corresponding Authors:
Wei Dang, Xiao-Hui Zhao
E-mail: dangwei@hbu.edu.cn;xhzhao@hbu.edu.cn
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Cite this article:
Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟), and Xiao-Hui Zhao(赵晓辉) In-plane oriented CH3NH3PbI3 nanowire suppression of the interface electron transfer to PCBM 2021 Chin. Phys. B 30 066801
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