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Chin. Phys. B, 2022, Vol. 31(1): 017201    DOI: 10.1088/1674-1056/abeb09
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Sai-Yan Chen(陈赛艳), Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽)
College of Science, Guilin University of Technology, Guilin 541004, China
Abstract  The dwell time and spin polarization (SP) of electrons tunneling through a parallel double δ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work. This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/AlxIn1-xAs heterostructure, respectively. An evident SP effect remains after a bias voltage is applied to the nanostructure. Moreover, both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage, which may result in an electrically-tunable temporal spin splitter for spintronics device applications.
Keywords:  parallel double δ-magnetic-barrier nanostructure      bias      dwell time      spin polarization      temporal spin splitter  
Received:  17 January 2021      Revised:  18 February 2021      Accepted manuscript online:  02 March 2021
PACS:  72.25.Dc (Spin polarized transport in semiconductors)  
  72.25.-b (Spin polarized transport)  
  72.25.Hg (Electrical injection of spin polarized carriers)  
  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11864009).
Corresponding Authors:  Sai-Yan Chen     E-mail:  6615049@glut.edu.cn

Cite this article: 

Sai-Yan Chen(陈赛艳), Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽) Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias 2022 Chin. Phys. B 31 017201

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